P

Inventor

TAKASHIMA DAISABURO

JP232 patents
⚠️ This page may combine multiple inventors who share the name “TAKASHIMA DAISABURO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

47 patents
US6198652B1Mar 6, 2001

Non-volatile semiconductor integrated memory device

TOSHIBA KK228 citations99
US5903492AMay 11, 1999

Semiconductor memory device and various systems mounting them

TOSHIBA KK217 citations99
US5894447AApr 13, 1999

Semiconductor memory device including a particular memory cell block structure

TOSHIBA KK175 citations99
US7778078B2Aug 17, 2010

Memory system and control method thereof

TOSHIBA KK60 citations98
US7791922B2Sep 7, 2010

Semiconductor memory device

TOSHIBA KK68 citations96
US6798686B2Sep 28, 2004

Semiconductor device

TOSHIBA KK67 citations96
US6643163B2Nov 4, 2003

Semiconductor device

TOSHIBA KK47 citations96
US6473330B1Oct 29, 2002

Chain type ferroelectric memory with isolation transistors coupled between a sense amplifier and an equalization circuit

TOSHIBA KK32 citations96
US6278165B1Aug 21, 2001

MIS transistor having a large driving current and method for producing the same

TOSHIBA KK72 citations96
US6151242ANov 21, 2000

Semiconductor memory device

TOSHIBA KK86 citations96
US6094370AJul 25, 2000

Semiconductor memory device and various systems mounting them

TOSHIBA KK81 citations96
US5953246ASep 14, 1999

Semiconductor memory device such as a DRAM capable of holding data without refresh

TOSHIBA KK71 citations96
US5931927AAug 3, 1999

Device for reducing the fluctuation of power supply voltage due to inductance by inverting bits in groups of data lines

TOSHIBA KK56 citations96
US5838038ANov 17, 1998

Dynamic random access memory device with the combined open/folded bit-line pair arrangement

TOSHIBA KK60 citations96
US5555519ASep 10, 1996

Dynamic random access memory device with the combined open/folded bit-line pair arrangement

TOSHIBA KK45 citations96
US5541885AJul 30, 1996

High speed memory with low standby current

TOSHIBA KK62 citations96
US5396450AMar 7, 1995

Dynamic random access memory device with the combined open/folded bit-line pair arrangement

TOSHIBA KK67 citations96
US5307315AApr 26, 1994

Integrated semiconductor memory with internal voltage booster of lesser dependency on power supply voltage

TOSHIBA KK64 citations96
US7697318B2Apr 13, 2010

Semiconductor memory device

TOSHIBA KK23 citations93
US7679412B2Mar 16, 2010

Power supply circuit

TOSHIBA KK25 citations93
US7254051B2Aug 7, 2007

Semiconductor memory device and various systems mounting them

TOSHIBA KK13 citations93
US7233536B2Jun 19, 2007

Semiconductor memory device having memory cells to store cell data and reference data

TOSHIBA KK21 citations93
US6826072B2Nov 30, 2004

Semiconductor memory device and various systems mounting them

TOSHIBA KK13 citations93
US6724025B1Apr 20, 2004

MOSFET having high and low dielectric materials

TOSHIBA KK41 citations93
US6657883B2Dec 2, 2003

Semiconductor memory device

TOSHIBA KK22 citations93
US6657882B2Dec 2, 2003

Semiconductor memory device and various systems mounting them

TOSHIBA KK20 citations93
US6574133B2Jun 3, 2003

Nonvolatile ferroelectric memory device having dummy cell circuit

TOSHIBA KK25 citations93
US6549449B2Apr 15, 2003

Semiconductor device

TOSHIBA KK22 citations93
US6493251B2Dec 10, 2002

Ferroelectric memory device

TOSHIBA KK52 citations93
US6487104B2Nov 26, 2002

Semiconductor memory device

TOSHIBA KK20 citations93
US6473331B2Oct 29, 2002

Semiconductor memory device and various systems mounting them

TOSHIBA KK27 citations93
US6320782B1Nov 20, 2001

Semiconductor memory device and various systems mounting them

TOSHIBA KK29 citations93
US6191971B1Feb 20, 2001

Ferroelectric memory device

TOSHIBA KK36 citations93
US6147918ANov 14, 2000

Dynamic semiconductor memory device having an improved sense amplifier layout arrangement

TOSHIBA KK25 citations93
US5969998AOct 19, 1999

MOS semiconductor device with memory cells each having storage capacitor and transfer transistor

TOSHIBA KK26 citations93
US5859805AJan 12, 1999

Dynamic semiconductor memory device having an improved sense amplifier layout arrangement

TOSHIBA KK17 citations93
US5761109AJun 2, 1998

Semiconductor memory device having folded bit line array and an open bit line array with imbalance correction

TOSHIBA KK46 citations93
US5732010AMar 24, 1998

Dynamic random access memory device with the combined open/folded bit-line pair arrangement

TOSHIBA KK51 citations93
US5703817ADec 30, 1997

Semiconductor memory device

TOSHIBA KK49 citations93
US5610868AMar 11, 1997

Semiconductor memory device

TOSHIBA KK28 citations93
US5602772AFeb 11, 1997

Dynamic semiconductor memory device

TOSHIBA KK32 citations93
US5555203ASep 10, 1996

Dynamic semiconductor memory device

TOSHIBA KK43 citations93
US5537347AJul 16, 1996

Dynamic semiconductor memory device

TOSHIBA KK24 citations93
US5418750AMay 23, 1995

Semiconductor memory device for suppressing noises occurring on bit and word lines

TOSHIBA KK34 citations93
US5222038AJun 22, 1993

Dynamic random access memory with enhanced sense-amplifier circuit

TOSHIBA KK27 citations93
US5144583ASep 1, 1992

Dynamic semiconductor memory device with twisted bit-line structure

TOSHIBA KK33 citations93
US5062077AOct 29, 1991

Dynamic type semiconductor memory device

TOSHIBA KK30 citations93

NAGADOMI YASUSHI

2 patents

INFINEON TECHNOLOGIES AG

1 patent

Showing the top 50 of 232 patents by PatentIndex Score.