Inventor
TAKASHIMA DAISABURO
JP232 patents
⚠️ This page may combine multiple inventors who share the name “TAKASHIMA DAISABURO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
47 patentsUS6198652B1Mar 6, 2001
Non-volatile semiconductor integrated memory device
TOSHIBA KK228 citations99
US5903492AMay 11, 1999
Semiconductor memory device and various systems mounting them
TOSHIBA KK217 citations99
US5894447AApr 13, 1999
Semiconductor memory device including a particular memory cell block structure
TOSHIBA KK175 citations99
US7778078B2Aug 17, 2010
Memory system and control method thereof
TOSHIBA KK60 citations98
US7791922B2Sep 7, 2010
Semiconductor memory device
TOSHIBA KK68 citations96
US6798686B2Sep 28, 2004
Semiconductor device
TOSHIBA KK67 citations96
US6643163B2Nov 4, 2003
Semiconductor device
TOSHIBA KK47 citations96
US6473330B1Oct 29, 2002
Chain type ferroelectric memory with isolation transistors coupled between a sense amplifier and an equalization circuit
TOSHIBA KK32 citations96
US6278165B1Aug 21, 2001
MIS transistor having a large driving current and method for producing the same
TOSHIBA KK72 citations96
US6151242ANov 21, 2000
Semiconductor memory device
TOSHIBA KK86 citations96
US6094370AJul 25, 2000
Semiconductor memory device and various systems mounting them
TOSHIBA KK81 citations96
US5953246ASep 14, 1999
Semiconductor memory device such as a DRAM capable of holding data without refresh
TOSHIBA KK71 citations96
US5931927AAug 3, 1999
Device for reducing the fluctuation of power supply voltage due to inductance by inverting bits in groups of data lines
TOSHIBA KK56 citations96
US5838038ANov 17, 1998
Dynamic random access memory device with the combined open/folded bit-line pair arrangement
TOSHIBA KK60 citations96
US5555519ASep 10, 1996
Dynamic random access memory device with the combined open/folded bit-line pair arrangement
TOSHIBA KK45 citations96
US5541885AJul 30, 1996
High speed memory with low standby current
TOSHIBA KK62 citations96
US5396450AMar 7, 1995
Dynamic random access memory device with the combined open/folded bit-line pair arrangement
TOSHIBA KK67 citations96
US5307315AApr 26, 1994
Integrated semiconductor memory with internal voltage booster of lesser dependency on power supply voltage
TOSHIBA KK64 citations96
US7697318B2Apr 13, 2010
Semiconductor memory device
TOSHIBA KK23 citations93
US7679412B2Mar 16, 2010
Power supply circuit
TOSHIBA KK25 citations93
US7254051B2Aug 7, 2007
Semiconductor memory device and various systems mounting them
TOSHIBA KK13 citations93
US7233536B2Jun 19, 2007
Semiconductor memory device having memory cells to store cell data and reference data
TOSHIBA KK21 citations93
US6826072B2Nov 30, 2004
Semiconductor memory device and various systems mounting them
TOSHIBA KK13 citations93
US6724025B1Apr 20, 2004
MOSFET having high and low dielectric materials
TOSHIBA KK41 citations93
US6657883B2Dec 2, 2003
Semiconductor memory device
TOSHIBA KK22 citations93
US6657882B2Dec 2, 2003
Semiconductor memory device and various systems mounting them
TOSHIBA KK20 citations93
US6574133B2Jun 3, 2003
Nonvolatile ferroelectric memory device having dummy cell circuit
TOSHIBA KK25 citations93
US6549449B2Apr 15, 2003
Semiconductor device
TOSHIBA KK22 citations93
US6493251B2Dec 10, 2002
Ferroelectric memory device
TOSHIBA KK52 citations93
US6487104B2Nov 26, 2002
Semiconductor memory device
TOSHIBA KK20 citations93
US6473331B2Oct 29, 2002
Semiconductor memory device and various systems mounting them
TOSHIBA KK27 citations93
US6320782B1Nov 20, 2001
Semiconductor memory device and various systems mounting them
TOSHIBA KK29 citations93
US6191971B1Feb 20, 2001
Ferroelectric memory device
TOSHIBA KK36 citations93
US6147918ANov 14, 2000
Dynamic semiconductor memory device having an improved sense amplifier layout arrangement
TOSHIBA KK25 citations93
US5969998AOct 19, 1999
MOS semiconductor device with memory cells each having storage capacitor and transfer transistor
TOSHIBA KK26 citations93
US5859805AJan 12, 1999
Dynamic semiconductor memory device having an improved sense amplifier layout arrangement
TOSHIBA KK17 citations93
US5761109AJun 2, 1998
Semiconductor memory device having folded bit line array and an open bit line array with imbalance correction
TOSHIBA KK46 citations93
US5732010AMar 24, 1998
Dynamic random access memory device with the combined open/folded bit-line pair arrangement
TOSHIBA KK51 citations93
US5703817ADec 30, 1997
Semiconductor memory device
TOSHIBA KK49 citations93
US5610868AMar 11, 1997
Semiconductor memory device
TOSHIBA KK28 citations93
US5602772AFeb 11, 1997
Dynamic semiconductor memory device
TOSHIBA KK32 citations93
US5555203ASep 10, 1996
Dynamic semiconductor memory device
TOSHIBA KK43 citations93
US5537347AJul 16, 1996
Dynamic semiconductor memory device
TOSHIBA KK24 citations93
US5418750AMay 23, 1995
Semiconductor memory device for suppressing noises occurring on bit and word lines
TOSHIBA KK34 citations93
US5222038AJun 22, 1993
Dynamic random access memory with enhanced sense-amplifier circuit
TOSHIBA KK27 citations93
US5144583ASep 1, 1992
Dynamic semiconductor memory device with twisted bit-line structure
TOSHIBA KK33 citations93
US5062077AOct 29, 1991
Dynamic type semiconductor memory device
TOSHIBA KK30 citations93
NAGADOMI YASUSHI
2 patentsINFINEON TECHNOLOGIES AG
1 patentShowing the top 50 of 232 patents by PatentIndex Score.