Inventor
LIN GEENG-LIH
TW28 patents
⚠️ This page may combine multiple inventors who share the name “LIN GEENG-LIH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VANGUARD INT SEMICONDUCT CORP
26 patentsUS6559508B1May 6, 2003
ESD protection device for open drain I/O pad in integrated circuits with merged layout structure
VANGUARD INT SEMICONDUCT CORP76 citations98
US6465848B2Oct 15, 2002
Low-voltage-triggered electrostatic discharge protection device and relevant circuitry
VANGUARD INT SEMICONDUCT CORP72 citations96
US6665160B2Dec 16, 2003
Voltage control component for ESD protection and its relevant circuitry
VANGUARD INT SEMICONDUCT CORP44 citations92
US6621673B2Sep 16, 2003
Two-stage ESD protection circuit with a secondary ESD protection circuit having a quicker trigger-on rate
VANGUARD INT SEMICONDUCT CORP41 citations92
US6590264B2Jul 8, 2003
Hybrid diodes with excellent ESD protection capacity
VANGUARD INT SEMICONDUCT CORP22 citations92
US6392860B1May 21, 2002
Electrostatic discharge protection circuit with gate-modulated field-oxide device
VANGUARD INT SEMICONDUCT CORP40 citations92
US6316805B1Nov 13, 2001
Electrostatic discharge device with gate-controlled field oxide transistor
VANGUARD INT SEMICONDUCT CORP20 citations92
US6046087AApr 4, 2000
Fabrication of ESD protection device using a gate as a silicide blocking mask for a drain region
VANGUARD INT SEMICONDUCT CORP30 citations92
US6526545B1Feb 25, 2003
Method for generating wafer testing program
VANGUARD INT SEMICONDUCT CORP26 citations86
US6218226B1Apr 17, 2001
Method of forming an ESD protection device
VANGUARD INT SEMICONDUCT CORP33 citations86
US9437591B1Sep 6, 2016
Cross-domain electrostatic discharge protection device
VANGUARD INT SEMICONDUCT CORP15 citations82
US7098522B2Aug 29, 2006
High voltage device with ESD protection
VANGUARD INT SEMICONDUCT CORP8 citations74
US6420774B1Jul 16, 2002
Low junction capacitance semiconductor structure and I/O buffer
VANGUARD INT SEMICONDUCT CORP7 citations74
US6355960B1Mar 12, 2002
ESD protection for open drain I/O pad in integrated circuit with parasitic field FET devices
VANGUARD INT SEMICONDUCT CORP8 citations74
US6274911B1Aug 14, 2001
CMOS device with deep current path for ESD protection
VANGUARD INT SEMICONDUCT CORP7 citations74
US10177135B2Jan 8, 2019
Integrated circuit and electrostatic discharge protection circuit thereof
VANGUARD INT SEMICONDUCT CORP6 citations72
US9633992B1Apr 25, 2017
Electrostatic discharge protection device
VANGUARD INT SEMICONDUCT CORP4 citations71
US7129546B2Oct 31, 2006
Electrostatic discharge protection device
VANGUARD INT SEMICONDUCT CORP6 citations63
US6169001B1Jan 2, 2001
CMOS device with deep current path for ESD protection
VANGUARD INT SEMICONDUCT CORP4 citations63
US7599160B2Oct 6, 2009
Electrostatic discharge protection circuits
VANGUARD INT SEMICONDUCT CORP3 citations62
US7579658B2Aug 25, 2009
Devices without current crowding effect at the finger's ends
VANGUARD INT SEMICONDUCT CORP4 citations60
US9893516B2Feb 13, 2018
ESD protection circuits
VANGUARD INT SEMICONDUCT CORP1 citations52
US9443943B2Sep 13, 2016
Semiconductor device and fabrication method thereof
VANGUARD INT SEMICONDUCT CORP0 citations52
US10644501B2May 5, 2020
Driving circuit
VANGUARD INT SEMICONDUCT CORP0 citations41
US7755143B2Jul 13, 2010
Semiconductor device
VANGUARD INT SEMICONDUCT CORP0 citations41
US9722097B2Aug 1, 2017
Semiconductor device and method for manufacturing the same
VANGUARD INT SEMICONDUCT CORP0 citations40