P

Inventor

PYUN KWANG EUI

KR23 patents

Patents

23 patents
US6392781B1May 21, 2002

High speed semiconductor optical modulator and fabricating method thereof

KOREA ELECTRONICS TELECOMM86 citations97
US6204102B1Mar 20, 2001

Method of fabricating compound semiconductor devices using lift-off of insulating film

KOREA ELECTRONICS TELECOMM35 citations92
US6190984B1Feb 20, 2001

Method for fabricating of super self-aligned bipolar transistor

KOREA ELECTRONICS TELECOMM24 citations92
US5970328AOct 19, 1999

Fabrication method of T-shaped gate electrode in semiconductor device

KOREA ELECTRONICS TELECOMM20 citations92
US5962879AOct 5, 1999

Super self-aligned bipolar transistor

KOREA ELECTRONICS TELECOMM30 citations92
US5897359AApr 27, 1999

Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor

KOREA ELECTRONICS TELECOMM41 citations92
US5798277AAug 25, 1998

Method for fabricating heterojunction bipolar transistor

KOREA ELECTRONICS TELECOMM39 citations92
US5696007ADec 9, 1997

Method for manufacturing a super self-aligned bipolar transistor

KOREA ELECTRONICS TELECOMM25 citations92
US5668022ASep 16, 1997

Silicon-silicon-germanium heterojunction bipolar transistor fabrication method

KOREA ELECTRONICS TELECOMM40 citations92
US6064265AMay 16, 2000

Gain control circuit for low-noise amplifier

KOREA ELECTRONICS TELECOMM24 citations90
US5496779AMar 5, 1996

Method for fabricating a self-aligned T-gate metal semiconductor field effect transistor

KOREA ELECTRONICS TELECOMM22 citations89
US6614086B2Sep 2, 2003

Avalanche photodetector

KOREA ELECTRONICS TELECOMM16 citations84
US5972232AOct 26, 1999

Micromirror for a hybrid optoelectronic integrated circuit, a method for manufacturing the same, a micromirror-photodetector assembly and an assembly of hybrid optoelectronic integrated circuit for receiving light

KOREA ELECTRONICS TELECOMM17 citations83
US6057736AMay 2, 2000

Gain controlled amplifier

KOREA ELECTRONICS TELECOMM13 citations73
US5885847AMar 23, 1999

Method of fabricating a compound semiconductor device

KOREA ELECTRONICS TELECOMM14 citations73
US5702975ADec 30, 1997

Method for isolating semiconductor device

KOREA ELECTRONICS TELECOMM14 citations73
US5989961ANov 23, 1999

Fabrication method of a vertical channel transistor

KOREA ELECTRONICS TELECOMM9 citations72
US5939954AAug 17, 1999

Equivalent circuit of package ground terminal paddle

KOREA ELECTRONICS TELECOMM13 citations72
US5895930AApr 20, 1999

Infrared photodetector with doping superlattice structure

KOREA ELECTRONICS TELECOMM7 citations72
US5861327AJan 19, 1999

Fabrication method of gate electrode in semiconductor device

KOREA ELECTRONICS TELECOMM13 citations71
US5856232AJan 5, 1999

Method for fabricating T-shaped electrode and metal layer having low resistance

KOREA ELECTRONICS TELECOMM15 citations69
US6100753AAug 8, 2000

Bias stabilization circuit

KOREA ELECTRONICS TELECOMM6 citations62
US5862144AJan 19, 1999

Method for correcting a high frequency measurement error

KOREA ELECTRONICS TELECOMM6 citations59