Inventor

YANG CHANG-JIP

KR12 patents

Patents

12 patents

US6953739B2Oct 11, 2005

Method for manufacturing a semiconductor device having hemispherical grains at very low atmospheric pressure using first, second, and third vacuum pumps

SAMSUNG ELECTRONICS CO LTD17 citations92

US6074486AJun 13, 2000

Apparatus and method for manufacturing a semiconductor device having hemispherical grains

SAMSUNG ELECTRONICS CO LTD53 citations92

US5821152AOct 13, 1998

Methods of forming hemispherical grained silicon electrodes including multiple temperature steps

SAMSUNG ELECTRONICS CO LTD29 citations92

US6036781AMar 14, 2000

Apparatus for guiding air current in a wafer loading chamber for chemical vapor deposition equipment

SAMSUNG ELECTRONICS CO LTD24 citations87

US6312987B1Nov 6, 2001

Method for manufacturing semiconductor device having hemispherical grain polysilicon film

SAMSUNG ELECTRONICS CO LTD15 citations82

US6090188AJul 18, 2000

Air intake apparatus of chemical vapor deposition equipment and method for removing ozone using the same

SAMSUNG ELECTRONICS CO LTD18 citations77

US6673673B1Jan 6, 2004

Method for manufacturing a semiconductor device having hemispherical grains

SAMSUNG ELECTRONICS CO LTD11 citations73

US6323084B1Nov 27, 2001

Semiconductor device capacitor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations69

US5470611ANov 28, 1995

Method for forming an oxide film of a semiconductor

SAMSUNG ELECTRONICS CO LTD11 citations68

US5352293AOct 4, 1994

Tube apparatus for manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD10 citations67

US6423998B1Jul 23, 2002

Semiconductor device capacitor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations58

US6683010B1Jan 27, 2004

Method for forming silicon-oxynitride layer on semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations54