Inventor

HEGDE RAMA I

US29 patents

⚠️ This page may combine multiple inventors who share the name “HEGDE RAMA I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HEGDE RAMA I

MOTOROLA INC

Process for forming a semiconductor device

Selective removal of a metal oxide dielectric

Inert plasma gas surface cleaning process performed insitu with physical vapor deposition (PVD) of a layer of material

Method for forming high dielectric constant metal oxides

Process for forming a semiconductor device

Method for forming a conductive structure having a composite or amorphous barrier layer

Transistor with layered high-K gate dielectric and method therefor

Selective removal of a metal oxide dielectric

Process for forming a structure

Method for forming a semiconductor device

Process for measuring surface topography using atomic force microscopy

Process for fabricating a collimated metal layer and contact structure in a semiconductor device

FREESCALE SEMICONDUCTOR INC

Electronic device including dielectric layer, and a process for forming the electronic device

Method of forming a semiconductor device having an interlayer and structure therefor

Method and structure for a large-grain high-K dielectric

Coating layer for a conductive structure

Metal gate with zirconium

Die attachment for packaged semiconductor device

HEGDE RAMA I

Lead frame sulfur removal

Structure for aluminum pad metal under ball bond

Methods and systems for selectively forming metal layers on lead frames after die attachment

Modified high-K gate dielectric stack

Methods and structures for capping a structure with a protective coating

Method for testing a contact structure

NXP USA INC

Bond pad structure for semiconductor device packaging

Substrate treatment method for semiconductor device fabrication

Method and structure for a large-grain high-k dielectric

Formation of metal oxide layer

Die attachment for packaged semiconductor device