Inventor
SHENG YI-CHUNG
TW49 patents
⚠️ This page may combine multiple inventors who share the name “SHENG YI-CHUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
45 patentsUS5904540AMay 18, 1999
Method for manufacturing shallow trench isolation
UNITED MICROELECTRONICS CORP84 citations96
US11296214B2Apr 5, 2022
High electron mobility transistor (HEMT) and forming method thereof
UNITED MICROELECTRONICS CORP18 citations93
US5981404ANov 9, 1999
Multilayer ONO structure
UNITED MICROELECTRONICS CORP88 citations93
US7342284B2Mar 11, 2008
Semiconductor MOS transistor device and method for making the same
UNITED MICROELECTRONICS CORP16 citations92
US5585297ADec 17, 1996
Method of manufacture of multi-state mask ROM and multi-state mask ROM device produced thereby
UNITED MICROELECTRONICS CORP23 citations92
US5545580AAug 13, 1996
Multi-state read-only memory using multiple polysilicon selective depositions
UNITED MICROELECTRONICS CORP20 citations92
US5504030AApr 2, 1996
Process for fabricating high-density mask ROM devices
UNITED MICROELECTRONICS CORP21 citations92
US10256155B1Apr 9, 2019
Method for fabricating single diffusion break structure directly under a gate line
UNITED MICROELECTRONICS CORP16 citations85
US5668031ASep 16, 1997
Method of fabricating high density flat cell mask ROM
UNITED MICROELECTRONICS CORP18 citations84
US6127212AOct 3, 2000
Method of forming a CMOS transistor
UNITED MICROELECTRONICS CORP17 citations81
US6103606AAug 15, 2000
Method of fabricating a word line
UNITED MICROELECTRONICS CORP8 citations74
US5668030ASep 16, 1997
Process for making identification alphanumeric code markings for mask ROM devices
UNITED MICROELECTRONICS CORP8 citations74
US5597753AJan 28, 1997
CVD oxide coding method for ultra-high density mask read-only-memory (ROM)
UNITED MICROELECTRONICS CORP17 citations74
US5536669AJul 16, 1996
Method for fabricating read-only-memory devices with self-aligned code implants
UNITED MICROELECTRONICS CORP12 citations74
US11316031B2Apr 26, 2022
Method of forming fin forced stack inverter
UNITED MICROELECTRONICS CORP2 citations73
US5891779AApr 6, 1999
Method of fabricating tetra-state mask read only memory
UNITED MICROELECTRONICS CORP9 citations73
US5854109ADec 29, 1998
Silicide process for manufacturing a mask ROM
UNITED MICROELECTRONICS CORP14 citations73
US5846865ADec 8, 1998
Method of fabricating flat-cell mask read-only memory (ROM) devices
UNITED MICROELECTRONICS CORP10 citations73
US11631761B2Apr 18, 2023
High electron mobility transistor (HEMT) and forming method thereof
UNITED MICROELECTRONICS CORP1 citations72
US10991757B2Apr 27, 2021
Magnetoresistive random access memory
UNITED MICROELECTRONICS CORP1 citations72
US10867999B2Dec 15, 2020
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP5 citations69
US7508053B2Mar 24, 2009
Semiconductor MOS transistor device and method for making the same
UNITED MICROELECTRONICS CORP2 citations63
US5693551ADec 2, 1997
Method for fabricating a tri-state read-only memory device
UNITED MICROELECTRONICS CORP4 citations63
US5654576AAug 5, 1997
Post-titanium nitride mask ROM programming method and device manufactured thereby
UNITED MICROELECTRONICS CORP4 citations63
US11705512B2Jul 18, 2023
High electron mobility transistor (HEMT) and forming method thereof
UNITED MICROELECTRONICS CORP0 citations62
US6544849B2Apr 8, 2003
Method of fabricating semiconductor device for preventing polysilicon line being damaged during removal of photoresist
UNITED MICROELECTRONICS CORP4 citations62
US12200947B2Jan 14, 2025
Magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations61
US11895847B2Feb 6, 2024
Magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations61
US11532666B2Dec 20, 2022
Magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations61
US10247774B2Apr 2, 2019
Test key structure and method of measuring resistance of vias
UNITED MICROELECTRONICS CORP1 citations60
US11296036B2Apr 5, 2022
Mark pattern in semiconductor device
UNITED MICROELECTRONICS CORP0 citations59
US5585296ADec 17, 1996
Method of fabricating memory cells with buried bit lines
UNITED MICROELECTRONICS CORP4 citations57
US10580883B2Mar 3, 2020
1-1 fin forced stack inverter
UNITED MICROELECTRONICS CORP0 citations52
US7749833B2Jul 6, 2010
Semiconductor MOS transistor device and method for making the same
UNITED MICROELECTRONICS CORP0 citations52
US7550356B2Jun 23, 2009
Method of fabricating strained-silicon transistors
UNITED MICROELECTRONICS CORP1 citations52
US5859460AJan 12, 1999
Tri-state read-only memory device and method for fabricating the same
UNITED MICROELECTRONICS CORP1 citations52
US5756376AMay 26, 1998
Method for removing a diffusion barrier layer on pad regions
UNITED MICROELECTRONICS CORP1 citations52
US5753552AMay 19, 1998
Method for fabricating a storage electrode without polysilicon bridge and undercut
UNITED MICROELECTRONICS CORP1 citations52
US10700126B2Jun 30, 2020
Magnetoresistive random access memory wherein number of memory cells in each string is equal to number of strings connected in parallel
UNITED MICROELECTRONICS CORP0 citations51
US10692928B1Jun 23, 2020
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US8850370B2Sep 30, 2014
Method of manufacturing semiconductor circuit structure
UNITED MICROELECTRONICS CORP0 citations51
US7932104B2Apr 26, 2011
Method for inspecting photoresist pattern
UNITED MICROELECTRONICS CORP0 citations51
US10529707B2Jan 7, 2020
Intra-metal capacitor and method of forming the same
UNITED MICROELECTRONICS CORP0 citations49
US10002864B1Jun 19, 2018
Intra-metal capacitor and method of forming the same
UNITED MICROELECTRONICS CORP0 citations49
US10777508B2Sep 15, 2020
Semiconductor device
UNITED MICROELECTRONICS CORP0 citations48