P

Inventor

SHENG YI-CHUNG

TW49 patents
⚠️ This page may combine multiple inventors who share the name “SHENG YI-CHUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

45 patents
US5904540AMay 18, 1999

Method for manufacturing shallow trench isolation

UNITED MICROELECTRONICS CORP84 citations96
US11296214B2Apr 5, 2022

High electron mobility transistor (HEMT) and forming method thereof

UNITED MICROELECTRONICS CORP18 citations93
US5981404ANov 9, 1999

Multilayer ONO structure

UNITED MICROELECTRONICS CORP88 citations93
US7342284B2Mar 11, 2008

Semiconductor MOS transistor device and method for making the same

UNITED MICROELECTRONICS CORP16 citations92
US5585297ADec 17, 1996

Method of manufacture of multi-state mask ROM and multi-state mask ROM device produced thereby

UNITED MICROELECTRONICS CORP23 citations92
US5545580AAug 13, 1996

Multi-state read-only memory using multiple polysilicon selective depositions

UNITED MICROELECTRONICS CORP20 citations92
US5504030AApr 2, 1996

Process for fabricating high-density mask ROM devices

UNITED MICROELECTRONICS CORP21 citations92
US10256155B1Apr 9, 2019

Method for fabricating single diffusion break structure directly under a gate line

UNITED MICROELECTRONICS CORP16 citations85
US5668031ASep 16, 1997

Method of fabricating high density flat cell mask ROM

UNITED MICROELECTRONICS CORP18 citations84
US6127212AOct 3, 2000

Method of forming a CMOS transistor

UNITED MICROELECTRONICS CORP17 citations81
US6103606AAug 15, 2000

Method of fabricating a word line

UNITED MICROELECTRONICS CORP8 citations74
US5668030ASep 16, 1997

Process for making identification alphanumeric code markings for mask ROM devices

UNITED MICROELECTRONICS CORP8 citations74
US5597753AJan 28, 1997

CVD oxide coding method for ultra-high density mask read-only-memory (ROM)

UNITED MICROELECTRONICS CORP17 citations74
US5536669AJul 16, 1996

Method for fabricating read-only-memory devices with self-aligned code implants

UNITED MICROELECTRONICS CORP12 citations74
US11316031B2Apr 26, 2022

Method of forming fin forced stack inverter

UNITED MICROELECTRONICS CORP2 citations73
US5891779AApr 6, 1999

Method of fabricating tetra-state mask read only memory

UNITED MICROELECTRONICS CORP9 citations73
US5854109ADec 29, 1998

Silicide process for manufacturing a mask ROM

UNITED MICROELECTRONICS CORP14 citations73
US5846865ADec 8, 1998

Method of fabricating flat-cell mask read-only memory (ROM) devices

UNITED MICROELECTRONICS CORP10 citations73
US11631761B2Apr 18, 2023

High electron mobility transistor (HEMT) and forming method thereof

UNITED MICROELECTRONICS CORP1 citations72
US10991757B2Apr 27, 2021

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP1 citations72
US10867999B2Dec 15, 2020

Semiconductor device and method of forming the same

UNITED MICROELECTRONICS CORP5 citations69
US7508053B2Mar 24, 2009

Semiconductor MOS transistor device and method for making the same

UNITED MICROELECTRONICS CORP2 citations63
US5693551ADec 2, 1997

Method for fabricating a tri-state read-only memory device

UNITED MICROELECTRONICS CORP4 citations63
US5654576AAug 5, 1997

Post-titanium nitride mask ROM programming method and device manufactured thereby

UNITED MICROELECTRONICS CORP4 citations63
US11705512B2Jul 18, 2023

High electron mobility transistor (HEMT) and forming method thereof

UNITED MICROELECTRONICS CORP0 citations62
US6544849B2Apr 8, 2003

Method of fabricating semiconductor device for preventing polysilicon line being damaged during removal of photoresist

UNITED MICROELECTRONICS CORP4 citations62
US12200947B2Jan 14, 2025

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US11895847B2Feb 6, 2024

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US11532666B2Dec 20, 2022

Magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US10247774B2Apr 2, 2019

Test key structure and method of measuring resistance of vias

UNITED MICROELECTRONICS CORP1 citations60
US11296036B2Apr 5, 2022

Mark pattern in semiconductor device

UNITED MICROELECTRONICS CORP0 citations59
US5585296ADec 17, 1996

Method of fabricating memory cells with buried bit lines

UNITED MICROELECTRONICS CORP4 citations57
US10580883B2Mar 3, 2020

1-1 fin forced stack inverter

UNITED MICROELECTRONICS CORP0 citations52
US7749833B2Jul 6, 2010

Semiconductor MOS transistor device and method for making the same

UNITED MICROELECTRONICS CORP0 citations52
US7550356B2Jun 23, 2009

Method of fabricating strained-silicon transistors

UNITED MICROELECTRONICS CORP1 citations52
US5859460AJan 12, 1999

Tri-state read-only memory device and method for fabricating the same

UNITED MICROELECTRONICS CORP1 citations52
US5756376AMay 26, 1998

Method for removing a diffusion barrier layer on pad regions

UNITED MICROELECTRONICS CORP1 citations52
US5753552AMay 19, 1998

Method for fabricating a storage electrode without polysilicon bridge and undercut

UNITED MICROELECTRONICS CORP1 citations52
US10700126B2Jun 30, 2020

Magnetoresistive random access memory wherein number of memory cells in each string is equal to number of strings connected in parallel

UNITED MICROELECTRONICS CORP0 citations51
US10692928B1Jun 23, 2020

Semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations51
US8850370B2Sep 30, 2014

Method of manufacturing semiconductor circuit structure

UNITED MICROELECTRONICS CORP0 citations51
US7932104B2Apr 26, 2011

Method for inspecting photoresist pattern

UNITED MICROELECTRONICS CORP0 citations51
US10529707B2Jan 7, 2020

Intra-metal capacitor and method of forming the same

UNITED MICROELECTRONICS CORP0 citations49
US10002864B1Jun 19, 2018

Intra-metal capacitor and method of forming the same

UNITED MICROELECTRONICS CORP0 citations49
US10777508B2Sep 15, 2020

Semiconductor device

UNITED MICROELECTRONICS CORP0 citations48

CHEN CHUN-CHIA

1 patent

LIN HUANG-YI

1 patent

CHANG CHU-CHUN

1 patent

SUN CHIA-CHEN

1 patent