P

Inventor

RIDLEY RODNEY S

US21 patents
⚠️ This page may combine multiple inventors who share the name “RIDLEY RODNEY S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FAIRCHILD SEMICONDUCTOR

18 patents
US7504303B2Mar 17, 2009

Trench-gate field effect transistors and methods of forming the same

FAIRCHILD SEMICONDUCTOR94 citations99
US7449354B2Nov 11, 2008

Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch

FAIRCHILD SEMICONDUCTOR99 citations98
US6399022B1Jun 4, 2002

Simplified ozonator for a semiconductor wafer cleaner

FAIRCHILD SEMICONDUCTOR350 citations98
US6673681B2Jan 6, 2004

Process for forming MOS-gated power device having segmented trench and extended doping zone

FAIRCHILD SEMICONDUCTOR79 citations97
US6433385B1Aug 13, 2002

MOS-gated power device having segmented trench and extended doping zone and process for forming same

FAIRCHILD SEMICONDUCTOR119 citations97
US6465325B2Oct 15, 2002

Process for depositing and planarizing BPSG for dense trench MOSFET application

FAIRCHILD SEMICONDUCTOR127 citations95
US8043913B2Oct 25, 2011

Method of forming trench-gate field effect transistors

FAIRCHILD SEMICONDUCTOR13 citations92
US7923776B2Apr 12, 2011

Trench-gate field effect transistor with channel enhancement region and methods of forming the same

FAIRCHILD SEMICONDUCTOR19 citations92
US7436021B2Oct 14, 2008

Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing

FAIRCHILD SEMICONDUCTOR16 citations92
US7416948B2Aug 26, 2008

Trench FET with improved body to gate alignment

FAIRCHILD SEMICONDUCTOR30 citations92
US6635535B2Oct 21, 2003

Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing

FAIRCHILD SEMICONDUCTOR28 citations92
US6602768B2Aug 5, 2003

MOS-gated power device with doped polysilicon body and process for forming same

FAIRCHILD SEMICONDUCTOR19 citations92
US6573569B2Jun 3, 2003

Trench MOSFET with low gate charge

FAIRCHILD SEMICONDUCTOR35 citations85
US8884365B2Nov 11, 2014

Trench-gate field effect transistor

FAIRCHILD SEMICONDUCTOR4 citations84
US6365942B1Apr 2, 2002

MOS-gated power device with doped polysilicon body and process for forming same

FAIRCHILD SEMICONDUCTOR14 citations84
US6367493B2Apr 9, 2002

Potted transducer array with matching network in a multiple pass configuration

FAIRCHILD SEMICONDUCTOR11 citations69
US6314974B1Nov 13, 2001

Potted transducer array with matching network in a multiple pass configuration

FAIRCHILD SEMICONDUCTOR9 citations69
US6309952B1Oct 30, 2001

Process for forming high voltage junction termination extension oxide

FAIRCHILD SEMICONDUCTOR5 citations59

GREBS THOMAS E

2 patents

YILMAZ HAMZA

1 patent