Inventor
RIDLEY RODNEY S
US21 patents
⚠️ This page may combine multiple inventors who share the name “RIDLEY RODNEY S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FAIRCHILD SEMICONDUCTOR
18 patentsUS7504303B2Mar 17, 2009
Trench-gate field effect transistors and methods of forming the same
FAIRCHILD SEMICONDUCTOR94 citations99
US7449354B2Nov 11, 2008
Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch
FAIRCHILD SEMICONDUCTOR99 citations98
US6399022B1Jun 4, 2002
Simplified ozonator for a semiconductor wafer cleaner
FAIRCHILD SEMICONDUCTOR350 citations98
US6673681B2Jan 6, 2004
Process for forming MOS-gated power device having segmented trench and extended doping zone
FAIRCHILD SEMICONDUCTOR79 citations97
US6433385B1Aug 13, 2002
MOS-gated power device having segmented trench and extended doping zone and process for forming same
FAIRCHILD SEMICONDUCTOR119 citations97
US6465325B2Oct 15, 2002
Process for depositing and planarizing BPSG for dense trench MOSFET application
FAIRCHILD SEMICONDUCTOR127 citations95
US8043913B2Oct 25, 2011
Method of forming trench-gate field effect transistors
FAIRCHILD SEMICONDUCTOR13 citations92
US7923776B2Apr 12, 2011
Trench-gate field effect transistor with channel enhancement region and methods of forming the same
FAIRCHILD SEMICONDUCTOR19 citations92
US7436021B2Oct 14, 2008
Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing
FAIRCHILD SEMICONDUCTOR16 citations92
US7416948B2Aug 26, 2008
Trench FET with improved body to gate alignment
FAIRCHILD SEMICONDUCTOR30 citations92
US6635535B2Oct 21, 2003
Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing
FAIRCHILD SEMICONDUCTOR28 citations92
US6602768B2Aug 5, 2003
MOS-gated power device with doped polysilicon body and process for forming same
FAIRCHILD SEMICONDUCTOR19 citations92
US6573569B2Jun 3, 2003
Trench MOSFET with low gate charge
FAIRCHILD SEMICONDUCTOR35 citations85
US8884365B2Nov 11, 2014
Trench-gate field effect transistor
FAIRCHILD SEMICONDUCTOR4 citations84
US6365942B1Apr 2, 2002
MOS-gated power device with doped polysilicon body and process for forming same
FAIRCHILD SEMICONDUCTOR14 citations84
US6367493B2Apr 9, 2002
Potted transducer array with matching network in a multiple pass configuration
FAIRCHILD SEMICONDUCTOR11 citations69
US6314974B1Nov 13, 2001
Potted transducer array with matching network in a multiple pass configuration
FAIRCHILD SEMICONDUCTOR9 citations69
US6309952B1Oct 30, 2001
Process for forming high voltage junction termination extension oxide
FAIRCHILD SEMICONDUCTOR5 citations59