Inventor

JUNG WON-CHANG

KR15 patents

⚠️ This page may combine multiple inventors who share the name “JUNG WON-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

14 patents

US7460418B2Dec 2, 2008

Semiconductor memory device for stack package and read data skew control method thereof

SAMSUNG ELECTRONICS CO LTD10 citations83

US7307910B2Dec 11, 2007

Data path reset circuit using clock enable signal, reset method, and semiconductor memory device including the data path reset circuit and adopting the reset method

SAMSUNG ELECTRONICS CO LTD10 citations73

US6819623B2Nov 16, 2004

Integrated circuit memory devices having efficient column select signal generation during normal and refresh modes of operation and methods of operating same

SAMSUNG ELECTRONICS CO LTD11 citations73

US6643201B2Nov 4, 2003

Memory device having read charge control, write charge control and floating or precharge circuits

SAMSUNG ELECTRONICS CO LTD3 citations63

US7692995B2Apr 6, 2010

Redundancy program circuit and methods thereof

SAMSUNG ELECTRONICS CO LTD1 citations62

US7606090B2Oct 20, 2009

Redundancy program circuit and methods thereof

SAMSUNG ELECTRONICS CO LTD2 citations62

US6992905B2Jan 31, 2006

High voltage generator having separate voltage supply circuit

SAMSUNG ELECTRONICS CO LTD5 citations62

US6982917B2Jan 3, 2006

DRAM partial refresh circuits and methods

SAMSUNG ELECTRONICS CO LTD6 citations62

US8010765B2Aug 30, 2011

Semiconductor memory device and method for controlling clock latency according to reordering of burst data

SAMSUNG ELECTRONICS CO LTD0 citations51

US7609580B2Oct 27, 2009

Redundancy program circuit and methods thereof

SAMSUNG ELECTRONICS CO LTD0 citations51

US6775170B2Aug 10, 2004

Semiconductor memory device having write column select line or read column select line for shielding signal line

SAMSUNG ELECTRONICS CO LTD1 citations51

JUN IN-WOO

1 patent

US8644101B2Feb 4, 2014

Local sense amplifier circuit and semiconductor memory device including the same

JUN IN-WOO413 citations95

JUNG WON-CHANG

SAMSUNG ELECTRONICS CO LTD

Semiconductor memory device for stack package and read data skew control method thereof

Redundancy program circuit and methods thereof

Redundancy program circuit and methods thereof

Internal reset signal generator for use in semiconductor memory

Data path reset circuit using clock enable signal, reset method, and semiconductor memory device including the data path reset circuit and adopting the reset method

Integrated circuit memory devices having efficient column select signal generation during normal and refresh modes of operation and methods of operating same

Memory device having read charge control, write charge control and floating or precharge circuits

Redundancy program circuit and methods thereof

Redundancy program circuit and methods thereof

High voltage generator having separate voltage supply circuit

DRAM partial refresh circuits and methods

Semiconductor memory device and method for controlling clock latency according to reordering of burst data

Redundancy program circuit and methods thereof

Semiconductor memory device having write column select line or read column select line for shielding signal line

JUN IN-WOO

Local sense amplifier circuit and semiconductor memory device including the same