Inventor

YIM KANG SUB

US43 patents

⚠️ This page may combine multiple inventors who share the name “YIM KANG SUB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YIM KANG SUB

APPLIED MATERIALS INC

Method for producing gate stack sidewall spacers

Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)

Ultra low k plasma CVD nanotube/spin-on dielectrics with improved properties for advanced nanoelectronic device fabrication

Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)

Method and apparatus for deposition of low dielectric constant materials

Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide

Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay

Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)

Method for forming ultra low k films using electron beam

Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers

Cobalt selectivity improvement in selective cobalt process sequence

Multi-stage curing of low K nano-porous films

Method for forming ultra low k films using electron beam

Forming a low-k dielectric layer with reduced dielectric constant and strengthened mechanical properties

Method to reduce dielectric constant of a porous low-k film

Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)

Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)

Systems and methods for forming UV-cured low-κ dielectric films

Systems and methods for depositing low-κdielectric films

Enhancement of modulus and hardness for UV-cured ultra low-k dielectric films

Silicon precursors to make ultra low-K films of K&lt;2.2 with high mechanical properties by plasma enhanced chemical vapor deposition

Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor deposition

Low-k dielectric with self-forming barrier layer

Cobalt selectivity improvement in selective cobalt process sequence

Multi-layer dielectric stack for plasma damage protection

Hermetic cap layers formed on low-κ films by plasma enhanced chemical vapor deposition

Hermetic cap layers formed on low-k films by plasma enhanced chemical vapor deposition

Single precursor low-k film deposition and UV cure for advanced technology node

Systems and methods for cleaning low-k deposition chambers

Low-k dielectric films

Systems and methods for depositing low-k dielectric films

Systems and methods for depositing low-k dielectric films

Low dielectric constant oxide and low resistance OP stack for 3D NAND application

Post treatment for dielectric constant reduction with pore generation on low K dielectric films

Adhesion layer to minimize dielectric constant increase with good adhesion strength in a PECVD process

Air-gap structure formation with ultra low-k dielectric layer on PECVD low-k chamber

UV assisted silylation for porous low-k film sealing

Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure

CHAN KELVIN

Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer

Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer

XIE BO

UV assisted silylation for recovery and pore sealing of damaged low K films

YIM KANG SUB

Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition

IBM

Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength

Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition