Inventor

AGARWAL ANANT K

US39 patents

⚠️ This page may combine multiple inventors who share the name “AGARWAL ANANT K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AGARWAL ANANT K

CREE INC

Multiple floating guard ring edge termination for silicon carbide devices

Silicon carbide inversion channel mosfets

Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation

Self-aligned bipolar junction silicon carbide transistors

Power semiconductor devices with mesa structures and buffer layers including mesa steps

High power insulated gate bipolar transistors

High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities

High voltage silicon carbide devices having bi-directional blocking capabilities

Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof

Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same

Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination

Diffused junction termination structures for silicon carbide devices

Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations

Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen

Optically triggered wide bandgap bipolar power switching devices and circuits

High voltage silicon carbide devices having bi-directional blocking capabilities

ZHANG QINGCHUN

High power insulated gate bipolar transistors

Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same

Power switching devices having controllable surge current capabilities

Double guard ring edge termination for silicon carbide devices

Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials

Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures

Mesa termination structures for power semiconductor devices including mesa step buffers

Bipolar junction transistor with improved avalanche capability

High-gain wide bandgap darlington transistors and related methods of fabrication

Semiconductor devices with current shifting regions and related methods

NORTHROP GRUMMAN CORP

Static induction transistor

Silicon carbide static induction transistor structure

Static induction transistors

Aluminum gallium nitride heterojunction bipolar transistor

Aluminum gallium nitride based heterojunction bipolar transistor

RYU SEI-HYUNG

Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection

Edge termination structures for silicon carbide devices

Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations

CHENG LIN

SiC devices with high blocking voltage terminated by a negative bevel

Bipolar junction transistor structure for reduced current crowding

WESTINGHOUSE ELECTRIC CORP

Non-volatile random access memory cell constructed of silicon carbide

CREE RESEARCH INC

Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices

DAS MRINAL K

Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen