Inventor

WANG HSINGYA ARTHUR

US35 patents

⚠️ This page may combine multiple inventors who share the name “WANG HSINGYA ARTHUR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG HSINGYA ARTHUR

ADVANCED MICRO DEVICES INC

Nonvolatile memory cell formed using self aligned source implant

Simplified process for fabricating flash eeprom cells

Method of programming a memory cell to contain multiple values

Block select transistor and method of fabrication

Method of forming a silicon gate to produce silicon devices with improved performance

Method of forming oxide isolation in a semiconductor device

Method of forming low capacitance interconnect structures on semiconductor substrates

Method of fabricating topside structure of a semiconductor device

Reduction of field oxide step height during semiconductor fabrication

Device including means for preventing tungsten silicide lifting, and method of fabrication thereof

Method of improving oxide isolation in a semiconductor device

E2 PROM device having erase gate in oxide isolation region in shallow trench and method of manufacture thereof

Method of fabricating topside structure of a semiconductor device

HYUNDAI ELECTRONICS AMERICA

Self-convergence of post-erase threshold voltages in a flash memory cell using transient response

Self-convergence of post-erase threshold voltages in a flash memory cell using transient response

Erase method for flash memory

Method of operating flash memory

Triple well flash memory fabrication process

Source side programming

Method and apparatus for bulk preprogramming flash memory cells with minimal source and drain currents

HYNIX SEMICONDUCTOR INC

Polysilicon layers structure and method of forming same

Transistor with ultra-short gate feature and method of fabricating the same

Method of forming transistors with ultra-short gate feature

Method of forming polysilicon layers in non-volatile memory

Method for forming transistors with ultra-short gate feature

Flash memory device having poly spacers

Flash memory device having poly spacers

HYNIX SEMICONDUCTOR AMERICA INC

Non-volatile memory cells with selectively formed floating gate

Processes and structures for self-aligned contact non-volatile memory with peripheral transistors easily modifiable for various technologies and applications

Non-volatile memory cells with selectively formed floating gate

Flash memory cell fabrication sequence

RABKIN PETER

Method of forming a non-volatile memory cell using off-set spacers

Method of forming transistors with ultra-short gate feature

INTEGRATED SILICON SOLUTION INC

FINFET stack gate memory and method of forming thereof

Wafer-bonding structure and method of forming thereof