Inventor
BERLINER NATHANIEL C
US4 patents
Patents
4 patentsUS8900973B2Dec 2, 2014
Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusion
BERLINER NATHANIEL C14 citations81
US8124427B2Feb 28, 2012
Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness
BERLINER NATHANIEL C2 citations60
US8940554B2Jan 27, 2015
Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness
BERLINER NATHANIEL C0 citations50
US9018024B2Apr 28, 2015
Creating extremely thin semiconductor-on-insulator (ETSOI) having substantially uniform thickness
BERLINER NATHANIEL C0 citations39