Inventor
LAL RAKESH K
US27 patents
⚠️ This page may combine multiple inventors who share the name “LAL RAKESH K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TRANSPHORM INC
17 patentsUS9443938B2Sep 13, 2016
III-nitride transistor including a p-type depleting layer
TRANSPHORM INC27 citations94
US9087718B2Jul 21, 2015
Enhancement-mode III-nitride devices
TRANSPHORM INC29 citations94
US9935190B2Apr 3, 2018
Forming enhancement mode III-nitride devices
TRANSPHORM INC25 citations93
US10043898B2Aug 7, 2018
Enhancement-mode III-nitride devices
TRANSPHORM INC14 citations92
US9590060B2Mar 7, 2017
Enhancement-mode III-nitride devices
TRANSPHORM INC17 citations92
US9496137B2Nov 15, 2016
Methods of forming reverse side engineered III-nitride devices
TRANSPHORM INC15 citations92
US9171836B2Oct 27, 2015
Method of forming electronic components with increased reliability
TRANSPHORM INC15 citations92
US8895421B2Nov 25, 2014
III-N device structures and methods
TRANSPHORM INC17 citations92
US8860495B2Oct 14, 2014
Method of forming electronic components with increased reliability
TRANSPHORM INC17 citations92
US9318593B2Apr 19, 2016
Forming enhancement mode III-nitride devices
TRANSPHORM INC18 citations91
US10043896B2Aug 7, 2018
III-Nitride transistor including a III-N depleting layer
TRANSPHORM INC12 citations84
US9842922B2Dec 12, 2017
III-nitride transistor including a p-type depleting layer
TRANSPHORM INC12 citations84
US9224671B2Dec 29, 2015
III-N device structures and methods
TRANSPHORM INC12 citations84
US10224401B2Mar 5, 2019
III-nitride devices including a graded depleting layer
TRANSPHORM INC11 citations83
US10199217B2Feb 5, 2019
Methods of forming reverse side engineered III-nitride devices
TRANSPHORM INC1 citations73
US10629681B2Apr 21, 2020
III-nitride devices including a graded depleting layer
TRANSPHORM INC3 citations72
US10535763B2Jan 14, 2020
Enhancement-mode III-nitride devices
TRANSPHORM INC0 citations52
TRANSPHORM TECH INC
5 patentsUS11322599B2May 3, 2022
Enhancement mode III-nitride devices having an Al1-xSixO gate insulator
TRANSPHORM TECH INC4 citations70
US11121216B2Sep 14, 2021
III-nitride devices including a graded depleting layer
TRANSPHORM TECH INC0 citations61
US12550702B2Feb 10, 2026
III-nitride devices with through-via structures
TRANSPHORM TECH INC0 citations59
US12266725B2Apr 1, 2025
Lateral III-nitride devices including a vertical gate module
TRANSPHORM TECH INC0 citations59
US11973138B2Apr 30, 2024
N-polar devices including a depleting layer with improved conductivity
TRANSPHORM TECH INC1 citations59