Inventor
LEE TE-HAO
TW23 patents
⚠️ This page may combine multiple inventors who share the name “LEE TE-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
13 patentsUS9617147B2Apr 11, 2017
Dual layer microelectromechanical systems device and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9452924B2Sep 27, 2016
MEMS devices and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US11180365B2Nov 23, 2021
MEMS devices and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11018218B2May 25, 2021
Narrow gap device with parallel releasing structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11011601B2May 18, 2021
Narrow gap device with parallel releasing structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10497776B2Dec 3, 2019
Narrow gap device with parallel releasing structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10457550B2Oct 29, 2019
MEMS devices and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10160633B2Dec 25, 2018
MEMS devices and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10155655B2Dec 18, 2018
MEMS devices and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10099919B2Oct 16, 2018
MEMS devices and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10071905B2Sep 11, 2018
Micro-electro mechanical system (MEMS) structures with through substrate vias and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9499396B2Nov 22, 2016
MEMS devices and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9450109B2Sep 20, 2016
MEMS devices and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
4 patentsUS9133017B2Sep 15, 2015
MEMS structure with adaptable inter-substrate bond
TAIWAN SEMICONDUCTOR MFG49 citations98
US8748205B1Jun 10, 2014
MEMS structure with adaptable inter-substrate bond
TAIWAN SEMICONDUCTOR MFG5 citations84
US9006015B2Apr 14, 2015
Dual layer microelectromechanical systems device and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG2 citations63
US8969979B2Mar 3, 2015
MEMS devices
TAIWAN SEMICONDUCTOR MFG0 citations52