P

Inventor

AHN SANGHOON

KR46 patents
⚠️ This page may combine multiple inventors who share the name “AHN SANGHOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

32 patents
US9711453B2Jul 18, 2017

Semiconductor devices including a capping layer

SAMSUNG ELECTRONICS CO LTD12 citations92
US10269712B2Apr 23, 2019

Semiconductor devices including a capping layer

SAMSUNG ELECTRONICS CO LTD6 citations84
US9953924B2Apr 24, 2018

Semiconductor devices including a capping layer

SAMSUNG ELECTRONICS CO LTD10 citations84
US9842803B2Dec 12, 2017

Semiconductor devices including gaps between conductive patterns

SAMSUNG ELECTRONICS CO LTD5 citations84
US9524937B2Dec 20, 2016

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US9929099B2Mar 27, 2018

Planarized interlayer dielectric with air gap isolation

SAMSUNG ELECTRONICS CO LTD7 citations82
US11569128B2Jan 31, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US11515201B2Nov 29, 2022

Integrated circuit device including air gaps and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations72
US10943824B2Mar 9, 2021

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations72
US9972528B2May 15, 2018

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations72
US10566284B2Feb 18, 2020

Semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations71
US11069613B2Jul 20, 2021

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations68
US12243777B2Mar 4, 2025

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12080595B2Sep 3, 2024

Method of forming interconnect structure

SAMSUNG ELECTRONICS CO LTD0 citations62
US11862514B2Jan 2, 2024

Integrated circuit device including air gaps and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11823952B2Nov 21, 2023

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11723285B2Aug 8, 2023

Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11296277B2Apr 5, 2022

Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US9520300B2Dec 13, 2016

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US10707164B2Jul 7, 2020

Semiconductor devices including a capping layer

SAMSUNG ELECTRONICS CO LTD0 citations52
US10497647B2Dec 3, 2019

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US10141258B2Nov 27, 2018

Semiconductor devices having staggered air gaps

SAMSUNG ELECTRONICS CO LTD0 citations52
US9911644B2Mar 6, 2018

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9748170B2Aug 29, 2017

Semiconductor devices having staggered air gaps

SAMSUNG ELECTRONICS CO LTD0 citations52
US9558994B2Jan 31, 2017

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9406553B2Aug 2, 2016

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US10186485B2Jan 22, 2019

Planarized interlayer dielectric with air gap isolation

SAMSUNG ELECTRONICS CO LTD0 citations51
US11837618B1Dec 5, 2023

Image sensor including a protective layer

SAMSUNG ELECTRONICS CO LTD0 citations50
US11721622B2Aug 8, 2023

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations50
US9576848B2Feb 21, 2017

Method of treating a porous dielectric layer and a method of fabricating a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD0 citations49
US12125785B2Oct 22, 2024

Semiconductor integrated circuit device suppressing leakage current of multilayer wiring structures

SAMSUNG ELECTRONICS CO LTD0 citations48
US10446495B2Oct 15, 2019

Methods of forming an ultra-low-k dielectric layer and dielectric layers formed thereby

SAMSUNG ELECTRONICS CO LTD0 citations47

SAMSUNG DISPLAY CO LTD

6 patents

HAN KYU-HEE

3 patents

RHA SANGHO

2 patents

KIM JEEYONG

1 patent

ITM SEMICONDUCTOR CO LTD

1 patent

AHN SANGHOON

1 patent