Inventor
AHN SANGHOON
KR46 patents
⚠️ This page may combine multiple inventors who share the name “AHN SANGHOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
32 patentsUS9711453B2Jul 18, 2017
Semiconductor devices including a capping layer
SAMSUNG ELECTRONICS CO LTD12 citations92
US10269712B2Apr 23, 2019
Semiconductor devices including a capping layer
SAMSUNG ELECTRONICS CO LTD6 citations84
US9953924B2Apr 24, 2018
Semiconductor devices including a capping layer
SAMSUNG ELECTRONICS CO LTD10 citations84
US9842803B2Dec 12, 2017
Semiconductor devices including gaps between conductive patterns
SAMSUNG ELECTRONICS CO LTD5 citations84
US9524937B2Dec 20, 2016
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9929099B2Mar 27, 2018
Planarized interlayer dielectric with air gap isolation
SAMSUNG ELECTRONICS CO LTD7 citations82
US11569128B2Jan 31, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11515201B2Nov 29, 2022
Integrated circuit device including air gaps and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations72
US10943824B2Mar 9, 2021
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations72
US9972528B2May 15, 2018
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations72
US10566284B2Feb 18, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations71
US11069613B2Jul 20, 2021
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations68
US12243777B2Mar 4, 2025
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12080595B2Sep 3, 2024
Method of forming interconnect structure
SAMSUNG ELECTRONICS CO LTD0 citations62
US11862514B2Jan 2, 2024
Integrated circuit device including air gaps and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11823952B2Nov 21, 2023
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11723285B2Aug 8, 2023
Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11296277B2Apr 5, 2022
Variable resistance memory device having an anti-oxidation layer and a method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US9520300B2Dec 13, 2016
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US10707164B2Jul 7, 2020
Semiconductor devices including a capping layer
SAMSUNG ELECTRONICS CO LTD0 citations52
US10497647B2Dec 3, 2019
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10141258B2Nov 27, 2018
Semiconductor devices having staggered air gaps
SAMSUNG ELECTRONICS CO LTD0 citations52
US9911644B2Mar 6, 2018
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9748170B2Aug 29, 2017
Semiconductor devices having staggered air gaps
SAMSUNG ELECTRONICS CO LTD0 citations52
US9558994B2Jan 31, 2017
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9406553B2Aug 2, 2016
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10186485B2Jan 22, 2019
Planarized interlayer dielectric with air gap isolation
SAMSUNG ELECTRONICS CO LTD0 citations51
US11837618B1Dec 5, 2023
Image sensor including a protective layer
SAMSUNG ELECTRONICS CO LTD0 citations50
US11721622B2Aug 8, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US9576848B2Feb 21, 2017
Method of treating a porous dielectric layer and a method of fabricating a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US12125785B2Oct 22, 2024
Semiconductor integrated circuit device suppressing leakage current of multilayer wiring structures
SAMSUNG ELECTRONICS CO LTD0 citations48
US10446495B2Oct 15, 2019
Methods of forming an ultra-low-k dielectric layer and dielectric layers formed thereby
SAMSUNG ELECTRONICS CO LTD0 citations47
SAMSUNG DISPLAY CO LTD
6 patentsUS9969047B2May 15, 2018
Substrate polishing apparatus
SAMSUNG DISPLAY CO LTD2 citations71
US9460922B1Oct 4, 2016
Laser annealing apparatus and a method for manufacturing a display apparatus using the laser annealing apparatus
SAMSUNG DISPLAY CO LTD6 citations71
US9633845B2Apr 25, 2017
Method of manufacturing a substrate having a crystallized layer and a laser crystallizing apparatus for the same
SAMSUNG DISPLAY CO LTD2 citations70
US9387552B2Jul 12, 2016
Laser annealing apparatus and laser annealing method using the same
SAMSUNG DISPLAY CO LTD1 citations52
US9786499B2Oct 10, 2017
Method of manufacturing a substrate having a crystallized layer and a laser crystallizing apparatus for the same
SAMSUNG DISPLAY CO LTD0 citations49
US9829712B2Nov 28, 2017
Laser optical system and laser annealing device including the same
SAMSUNG DISPLAY CO LTD0 citations39
HAN KYU-HEE
3 patentsUS8786058B2Jul 22, 2014
Semiconductor devices and methods of manufacturing the same
HAN KYU-HEE8 citations82
US9337150B2May 10, 2016
Semiconductor devices including supporting patterns in gap regions between conductive patterns
HAN KYU-HEE4 citations72
US9741608B2Aug 22, 2017
Methods of fabricating semiconductor devices including supporting patterns in gap regions between conductive patterns
HAN KYU-HEE0 citations51