Inventor

Atiquzzaman FNU

US12 patents

⚠️ This page may combine multiple inventors who share the name “Atiquzzaman FNU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KEPLER COMPUTING INC

7 patents

US11659714B1May 23, 2023

Ferroelectric device film stacks with texturing layer, and method of forming such

KEPLER COMPUTING INC27 citations93

US12094923B2Sep 17, 2024

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices

KEPLER COMPUTING INC0 citations62

US11908704B2Feb 20, 2024

Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies

KEPLER COMPUTING INC0 citations62

US11894417B2Feb 6, 2024

Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies

KEPLER COMPUTING INC0 citations62

US11769790B2Sep 26, 2023

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors

KEPLER COMPUTING INC0 citations62

US11744081B1Aug 29, 2023

Ferroelectric device film stacks with texturing layer which is part of a bottom electrode, and method of forming such

KEPLER COMPUTING INC0 citations61

US11716858B1Aug 1, 2023

Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such

KEPLER COMPUTING INC0 citations61

CROSSBAR INC

5 patents

US10134984B1Nov 20, 2018

Atiquzzaman FNU

KEPLER COMPUTING INC

Ferroelectric device film stacks with texturing layer, and method of forming such

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices

Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies

Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors

Ferroelectric device film stacks with texturing layer which is part of a bottom electrode, and method of forming such

Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming such

CROSSBAR INC

Two-terminal memory electrode comprising a non-continuous contact surface

Resistive memory cell with intrinsic current control

Formation of structurally robust nanoscale Ag-based conductive structure

Resistive memory cell with intrinsic current control

Formation of structurally robust nanoscale Ag-based conductive structure