Inventor
GOLLADAY STEVEN D
US15 patents
⚠️ This page may combine multiple inventors who share the name “GOLLADAY STEVEN D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
10 patentsUS5614833AMar 25, 1997
Objective lens with large field deflection system and homogeneous large area secondary electron extraction field
IBM55 citations95
US6069684AMay 30, 2000
Electron beam projection lithography system (EBPS)
IBM42 citations92
US5404110AApr 4, 1995
System using induced current for contactless testing of wiring networks
IBM30 citations92
US4843330AJun 27, 1989
Electron beam contactless testing system with grid bias switching
IBM35 citations91
US6091187AJul 18, 2000
High emittance electron source having high illumination uniformity
IBM19 citations90
US5057773AOct 15, 1991
Method for opens/shorts testing of capacitively coupled networks in substrates using electron beams
IBM29 citations89
US4943769AJul 24, 1990
Apparatus and method for opens/shorts testing of capacitively coupled networks in substrates using electron beams
IBM34 citations89
US6069363AMay 30, 2000
Magnetic-electrostatic symmetric doublet projection lens
IBM15 citations73
US5612626AMar 18, 1997
System using induced current for contactless testing of wiring networks
IBM13 citations73
US5606261AFeb 25, 1997
Retarding field electron-optical apparatus
IBM6 citations73
NIKON CORP
4 patentsUS6180947B1Jan 30, 2001
Multi-element deflection aberration correction for electron beam lithography
NIKON CORP62 citations96
US6590216B1Jul 8, 2003
Servo control for high emittance electron source
NIKON CORP14 citations83
US6296976B1Oct 2, 2001
Compensation of within-subfield linewidth variation in e-beam projection lithography
NIKON CORP6 citations73
US6596999B2Jul 22, 2003
High performance source for electron beam projection lithography
NIKON CORP1 citations52