Inventor
HWANG DOOHEE
KR11 patents
Patents
11 patentsUS11315946B2Apr 26, 2022
Vertical semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10923195B2Feb 16, 2021
Nonvolatile memory device, an operating method thereof, and a storage system including the nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations71
US11495280B2Nov 8, 2022
Semiconductor memory devices and memory systems including the same
SAMSUNG ELECTRONICS CO LTD2 citations67
US11778825B2Oct 3, 2023
Method of fabricating a vertical semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11114165B2Sep 7, 2021
Semiconductor devices having increased efficiency in generation of gate-induced drain leakage current without insulation deterioration and methods of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US11957071B2Apr 9, 2024
Vertical variable resistance memory devices and methods of operation in the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US11508429B2Nov 22, 2022
Memory system performing hammer refresh operation and method of controlling refresh of memory device
SAMSUNG ELECTRONICS CO LTD1 citations56
US11398598B2Jul 26, 2022
Vertical variable resistance memory devices and methods of operation in the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US12446221B2Oct 14, 2025
Vertical non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD0 citations45
US11804254B2Oct 31, 2023
Memory device and method of refreshing memory device based on temperature
SAMSUNG ELECTRONICS CO LTD0 citations45
US12494243B2Dec 9, 2025
Memory device, memory system including memory device, and method of operating memory device
SAMSUNG ELECTRONICS CO LTD0 citations44