Inventor

LIM HANJIN

KR27 patents

⚠️ This page may combine multiple inventors who share the name “LIM HANJIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIM HANJIN

SAMSUNG ELECTRONICS CO LTD

Semiconductor device including capacitor and method of fabricating the same

Semiconductor devices and methods of fabricating the same

Semiconductor devices having a silicon-germanium channel layer and methods of forming the same

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor devices

Semiconductor devices

Semiconductor device including capacitor

Semiconductor device including capacitor

Semiconductor device including capacitor

Integrated circuit device

Semiconductor device

Semiconductor device including capacitor structure and method for manufacturing the same

Semiconductor device including a capacitor structure with a dielectric layer structure

Semiconductor device and method of fabricating the same

Semiconductor device

Batch-type apparatus for atomic layer etching (ALE), and ALE method and semiconductor device manufacturing method based on the same apparatus

Wiring structure and electronic device employing the same

Semiconductor devices including lower electrodes including inner protective layer and outer protective layer

Semiconductor device

Integrated circuit semiconductor device

Integrated circuit device

Method of forming semiconductor device

Etching methods and methods of manufacturing semiconductor devices using the same

Capacitor structure and semiconductor device including the same

PARK KIYEON

Capacitor that includes dielectric layer structure having plural metal oxides doped with different impurities