Inventor
YANG CHUNG-I
TW9 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHUNG-I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS12218214B2Feb 4, 2025
Source/drain silicide for multigate device performance and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12396240B2Aug 19, 2025
Source/drain silicide for multigate device performance and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317526B2May 27, 2025
Multi-gate devices and fabricating the same with etch rate modulation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11949001B2Apr 2, 2024
Multi-gate devices and fabricating the same with etch rate modulation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11282943B2Mar 22, 2022
Multi-gate devices and fabricating the same with etch rate modulation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230712B2Feb 18, 2025
Dielectric fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11735665B2Aug 22, 2023
Dielectric fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11404576B2Aug 2, 2022
Dielectric fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61