Inventor
WU LIN-JUNE
TW31 patents
⚠️ This page may combine multiple inventors who share the name “WU LIN-JUNE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
30 patentsUS6667230B2Dec 23, 2003
Passivation and planarization process for flip chip packages
TAIWAN SEMICONDUCTOR MFG71 citations96
US5518959AMay 21, 1996
Method for selectively depositing silicon oxide spacer layers
TAIWAN SEMICONDUCTOR MFG82 citations96
US6479872B1Nov 12, 2002
Dynamic substrate-coupled electrostatic discharging protection circuit
TAIWAN SEMICONDUCTOR MFG19 citations93
US6635576B1Oct 21, 2003
Method of fabricating borderless contact using graded-stair etch stop layers
TAIWAN SEMICONDUCTOR MFG44 citations92
US6465308B1Oct 15, 2002
Tunable threshold voltage of a thick field oxide ESD protection device with a N-field implant
TAIWAN SEMICONDUCTOR MFG17 citations92
US6362491B1Mar 26, 2002
Method of overlay measurement in both X and Y directions for photo stitch process
TAIWAN SEMICONDUCTOR MFG26 citations92
US5953601ASep 14, 1999
ESD implantation scheme for 0.35 μm 3.3V 70A gate oxide process
TAIWAN SEMICONDUCTOR MFG25 citations92
US5747381AMay 5, 1998
Technique for the removal of residual spin-on-glass (SOG) after full SOG etchback
TAIWAN SEMICONDUCTOR MFG50 citations92
US5393692AFeb 28, 1995
Recessed side-wall poly plugged local oxidation
TAIWAN SEMICONDUCTOR MFG40 citations92
US5801090ASep 1, 1998
Method of protecting an alignment mark in a semiconductor manufacturing process with CMP
TAIWAN SEMICONDUCTOR MFG22 citations91
US6284557B1Sep 4, 2001
Optical sensor by using tunneling diode
TAIWAN SEMICONDUCTOR MFG34 citations90
US5942800AAug 24, 1999
Stress buffered bond pad and method of making
TAIWAN SEMICONDUCTOR MFG25 citations90
US6468904B1Oct 22, 2002
RPO process for selective CoSix formation
TAIWAN SEMICONDUCTOR MFG41 citations89
US8344471B2Jan 1, 2013
CMOS image sensor big via bonding pad application for AICu process
TAIWAN SEMICONDUCTOR MFG11 citations84
US6611028B2Aug 26, 2003
Dynamic substrate-coupled electrostatic discharging protection circuit
TAIWAN SEMICONDUCTOR MFG14 citations84
US6531382B1Mar 11, 2003
Use of a capping layer to reduce particle evolution during sputter pre-clean procedures
TAIWAN SEMICONDUCTOR MFG16 citations83
US7220650B2May 22, 2007
Sidewall spacer for semiconductor device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG10 citations82
US6251724B1Jun 26, 2001
Method to increase the clear ration of capacitor silicon nitride to improve the threshold voltage uniformity
TAIWAN SEMICONDUCTOR MFG15 citations77
US6329717B1Dec 11, 2001
Integrated circuit having selectivity deposited silicon oxide spacer layer formed therein
TAIWAN SEMICONDUCTOR MFG8 citations74
US6717220B2Apr 6, 2004
Tunable threshold voltage of a thick field oxide ESD protection device with a N-field implant
TAIWAN SEMICONDUCTOR MFG6 citations73
US5981347ANov 9, 1999
Multiple thermal annealing method for a metal oxide semiconductor field effect transistor with enhanced hot carrier effect (HCE) resistance
TAIWAN SEMICONDUCTOR MFG16 citations72
US6258706B1Jul 10, 2001
Method for fabricating a stress buffered bond pad
TAIWAN SEMICONDUCTOR MFG8 citations69
US8680635B2Mar 25, 2014
CMOS image sensor big via bonding pad application for AICu process
TAIWAN SEMICONDUCTOR MFG3 citations63
US6297102B1Oct 2, 2001
Method of forming a surface implant region on a ROM cell using a PLDD implant
TAIWAN SEMICONDUCTOR MFG3 citations61
US6077746AJun 20, 2000
Using p-type halo implant as ROM cell isolation in flat-cell mask ROM process
TAIWAN SEMICONDUCTOR MFG6 citations61
US7067896B2Jun 27, 2006
Microelectronic fabrication having edge passivated bond pad integrated with option selection device access aperture
TAIWAN SEMICONDUCTOR MFG3 citations60
US6194275B1Feb 27, 2001
Method to form a mask ROM device with coding after source and drain implantation
TAIWAN SEMICONDUCTOR MFG1 citations52
US6693317B2Feb 17, 2004
Optical sensor by using tunneling diode
TAIWAN SEMICONDUCTOR MFG0 citations50
US6582981B2Jun 24, 2003
Method of using a tunneling diode in optical sensing devices
TAIWAN SEMICONDUCTOR MFG0 citations50
US6180964B1Jan 30, 2001
Low leakage wire bond pad structure for integrated circuits
TAIWAN SEMICONDUCTOR MFG1 citations46