Inventor
TEWS HELMUT
DE43 patents
⚠️ This page may combine multiple inventors who share the name “TEWS HELMUT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
26 patentsUS6599798B2Jul 29, 2003
Method of preparing buried LOCOS collar in trench DRAMS
INFINEON TECHNOLOGIES AG26 citations93
US7528453B2May 5, 2009
Field effect transistor with local source/drain insulation and associated method of production
INFINEON TECHNOLOGIES AG26 citations92
US6437401B1Aug 20, 2002
Structure and method for improved isolation in trench storage cells
INFINEON TECHNOLOGIES AG38 citations92
US7986023B2Jul 26, 2011
Semiconductor device with inductor
INFINEON TECHNOLOGIES AG15 citations83
US7777300B2Aug 17, 2010
Semiconductor device with capacitor
INFINEON TECHNOLOGIES AG16 citations83
US6740595B2May 25, 2004
Etch process for recessing polysilicon in trench structures
INFINEON TECHNOLOGIES AG16 citations83
US7129152B2Oct 31, 2006
Method for fabricating a short channel field-effect transistor
INFINEON TECHNOLOGIES AG11 citations81
US7943973B2May 17, 2011
Method for producing a field-effect transistor, field-effect transistor and integrated circuit arrangement
INFINEON TECHNOLOGIES AG6 citations74
US7786530B2Aug 31, 2010
Vertical field-effect transistor
INFINEON TECHNOLOGIES AG7 citations74
US7635908B2Dec 22, 2009
Corresponding capacitor arrangement and method for making the same
INFINEON TECHNOLOGIES AG7 citations74
US7405127B2Jul 29, 2008
Method for producing a vertical field effect transistor
INFINEON TECHNOLOGIES AG7 citations74
US6853025B2Feb 8, 2005
Trench capacitor with buried strap
INFINEON TECHNOLOGIES AG9 citations74
US7824993B2Nov 2, 2010
Field-effect transistor with local source/drain insulation and associated method of production
INFINEON TECHNOLOGIES AG7 citations73
US8946037B2Feb 3, 2015
Methods for producing a tunnel field-effect transistor
INFINEON TECHNOLOGIES AG2 citations63
US7745875B2Jun 29, 2010
Method for producing a vertical field effect transistor
INFINEON TECHNOLOGIES AG2 citations63
US7169677B2Jan 30, 2007
Method for producing a spacer structure
INFINEON TECHNOLOGIES AG3 citations63
US7816792B2Oct 19, 2010
Semiconductor device with conductive interconnect
INFINEON TECHNOLOGIES AG3 citations61
US7767100B2Aug 3, 2010
Patterning method and field effect transistors
INFINEON TECHNOLOGIES AG3 citations60
US7989294B2Aug 2, 2011
Vertical field-effect transistor
INFINEON TECHNOLOGIES AG1 citations52
US7915132B2Mar 29, 2011
Corresponding capacitor arrangement and method for making the same
INFINEON TECHNOLOGIES AG1 citations52
US7767518B2Aug 3, 2010
Field effect transistor
INFINEON TECHNOLOGIES AG1 citations52
US7462901B2Dec 9, 2008
Field effect transistor
INFINEON TECHNOLOGIES AG1 citations52
US7157329B2Jan 2, 2007
Trench capacitor with buried strap
INFINEON TECHNOLOGIES AG1 citations52
US6960541B2Nov 1, 2005
Process for fabrication of a semiconductor component having a tungsten oxide layer
INFINEON TECHNOLOGIES AG0 citations51
US6656798B2Dec 2, 2003
Gate processing method with reduced gate oxide corner and edge thinning
INFINEON TECHNOLOGIES AG1 citations51
US7318993B2Jan 15, 2008
Resistless lithography method for fabricating fine structures
INFINEON TECHNOLOGIES AG1 citations49
SIEMENS AG
9 patentsUS5994722ANov 30, 1999
Image display device that emits multicolored light
SIEMENS AG182 citations96
US5436475AJul 25, 1995
Bipolar transistor for high power in the microwave range
SIEMENS AG10 citations73
US5093272AMar 3, 1992
Manufacturing method for a self-aligned emitter-base-complex for heterobipolar transistors
SIEMENS AG16 citations73
US5070028ADec 3, 1991
Method for manufacturing bipolar transistors having extremely reduced base-collection capacitance
SIEMENS AG8 citations73
US5980631ANov 9, 1999
Method for manufacturing III-V semiconductor layers containing nitrogen
SIEMENS AG9 citations72
US5052821AOct 1, 1991
Measuring instrument for determining the temperature of semiconductor bodies and method for the manufacture of the measuring instrument
SIEMENS AG8 citations67
US4894350AJan 16, 1990
Method for manufacturing ohmic contacts having low transfer resistances
SIEMENS AG9 citations63
US5274266ADec 28, 1993
Permeable base transistor having selectively grown emitter
SIEMENS AG5 citations62
US4904612AFeb 27, 1990
Method for manufacturing a planar, self-aligned emitter-base complex
SIEMENS AG6 citations62