P

Inventor

TEWS HELMUT

DE43 patents
⚠️ This page may combine multiple inventors who share the name “TEWS HELMUT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

26 patents
US6599798B2Jul 29, 2003

Method of preparing buried LOCOS collar in trench DRAMS

INFINEON TECHNOLOGIES AG26 citations93
US7528453B2May 5, 2009

Field effect transistor with local source/drain insulation and associated method of production

INFINEON TECHNOLOGIES AG26 citations92
US6437401B1Aug 20, 2002

Structure and method for improved isolation in trench storage cells

INFINEON TECHNOLOGIES AG38 citations92
US7986023B2Jul 26, 2011

Semiconductor device with inductor

INFINEON TECHNOLOGIES AG15 citations83
US7777300B2Aug 17, 2010

Semiconductor device with capacitor

INFINEON TECHNOLOGIES AG16 citations83
US6740595B2May 25, 2004

Etch process for recessing polysilicon in trench structures

INFINEON TECHNOLOGIES AG16 citations83
US7129152B2Oct 31, 2006

Method for fabricating a short channel field-effect transistor

INFINEON TECHNOLOGIES AG11 citations81
US7943973B2May 17, 2011

Method for producing a field-effect transistor, field-effect transistor and integrated circuit arrangement

INFINEON TECHNOLOGIES AG6 citations74
US7786530B2Aug 31, 2010

Vertical field-effect transistor

INFINEON TECHNOLOGIES AG7 citations74
US7635908B2Dec 22, 2009

Corresponding capacitor arrangement and method for making the same

INFINEON TECHNOLOGIES AG7 citations74
US7405127B2Jul 29, 2008

Method for producing a vertical field effect transistor

INFINEON TECHNOLOGIES AG7 citations74
US6853025B2Feb 8, 2005

Trench capacitor with buried strap

INFINEON TECHNOLOGIES AG9 citations74
US7824993B2Nov 2, 2010

Field-effect transistor with local source/drain insulation and associated method of production

INFINEON TECHNOLOGIES AG7 citations73
US8946037B2Feb 3, 2015

Methods for producing a tunnel field-effect transistor

INFINEON TECHNOLOGIES AG2 citations63
US7745875B2Jun 29, 2010

Method for producing a vertical field effect transistor

INFINEON TECHNOLOGIES AG2 citations63
US7169677B2Jan 30, 2007

Method for producing a spacer structure

INFINEON TECHNOLOGIES AG3 citations63
US7816792B2Oct 19, 2010

Semiconductor device with conductive interconnect

INFINEON TECHNOLOGIES AG3 citations61
US7767100B2Aug 3, 2010

Patterning method and field effect transistors

INFINEON TECHNOLOGIES AG3 citations60
US7989294B2Aug 2, 2011

Vertical field-effect transistor

INFINEON TECHNOLOGIES AG1 citations52
US7915132B2Mar 29, 2011

Corresponding capacitor arrangement and method for making the same

INFINEON TECHNOLOGIES AG1 citations52
US7767518B2Aug 3, 2010

Field effect transistor

INFINEON TECHNOLOGIES AG1 citations52
US7462901B2Dec 9, 2008

Field effect transistor

INFINEON TECHNOLOGIES AG1 citations52
US7157329B2Jan 2, 2007

Trench capacitor with buried strap

INFINEON TECHNOLOGIES AG1 citations52
US6960541B2Nov 1, 2005

Process for fabrication of a semiconductor component having a tungsten oxide layer

INFINEON TECHNOLOGIES AG0 citations51
US6656798B2Dec 2, 2003

Gate processing method with reduced gate oxide corner and edge thinning

INFINEON TECHNOLOGIES AG1 citations51
US7318993B2Jan 15, 2008

Resistless lithography method for fabricating fine structures

INFINEON TECHNOLOGIES AG1 citations49

SIEMENS AG

9 patents

INFINEON TECHNOLOGIES CORP

2 patents

IBM

2 patents

OSRAM OPTO SEMICONDUCTORS GMBH

1 patent

FEHLHABER RODGER

1 patent

KAKOSCHKE RONALD

1 patent

HOLZ JUERGEN

1 patent