Inventor

LEE HEON

KR64 patents

⚠️ This page may combine multiple inventors who share the name “LEE HEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE HEON

HEWLETT PACKARD DEVELOPMENT CO

Nano-size imprinting stamp using spacer technique

Low heat loss and small contact area composite electrode for a phase change media memory device

Micro-casted silicon carbide nano-imprinting stamp

Phase change material electronic memory structure and method for forming

Method of fabricating sub-lithographic sized line and space patterns for nano-imprinting lithography

Micro-casted silicon carbide nano-imprinting stamp

Method of hardening a nano-imprinting stamp

Substrate bonding using a selenidation reaction

Silicon carbide imprint stamp

Method of fabricating a MRAM device

Method to fabricate smooth-surfaced crystalline phase-change layer for atomic resolution storage device

Forming a contact in a thin-film device

Magnetic memory device

Method of fabricating a sub-lithographic sized via

Storage device with charge trapping structure and methods

Device isolation process flow for ARS system

Method of forming a shared global word line MRAM structure

Method of making a magnetic tunnel junction device

Method of fabricating a compositionally modulated electrode in a magnetic tunnel junction device

Magnetic memory device

Imprint stamp

Method of making a magnetic tunnel junction device

Magnetic memory device

Storage device with charge trapping structure and methods

INFINEON TECHNOLOGIES AG

Method for fabricating 4F2 memory cells with improved gate conductor structure

Method for fabrication of enlarged stacked capacitors using isotropic etching

Maskless process for self-aligned contacts

Self-aligned LDD formation with one-step implantation for transistor formation

Sidewall oxide process for improved shallow junction formation in support region

Method to etch poly Si gate stacks with raised STI structure

Area-efficient stack capacitor

Dual thickness gate oxide fabrication method using plasma surface treatment

IBM

Vertical MOSFET

Method of reducing RIE lag for deep trench silicon etching

Vertical MOSFET

Gate prespacers for high density, high performance DRAMs

SAMSUNG ELECTRONICS CO LTD

Semiconductor memory device and refresh method thereof

Method of refreshing volatile memory device

Heating MRAM cells to ease state switching

HYUNDAI MOTOR CO LTD

Bypass device for automatic transmission fluid provided with a thermal expansion bar

Easy-exchangeable head lamp for automobiles

HEWLETT PACKARD CO

Process flow for ARS mover using selenidation wafer bonding after processing a media side of a rotor wafer

Process flow for ARS mover using selenidation wafer bonding before processing a media side of a rotor wafer

HEWLETT PACKARD DEV COMPANY LL

Memory device having dual tunnel junction memory cells

HEWLETT PACKARD COMPANY L P

Low heat loss and small contact area composite electrode for a phase change media memory device

LUCENT TECHNOLOGIES INC

Etch endpoint detection

HEWLETT PACKARD DEVELPOMENT CO

Device isolation process flow for ARS system

LG ELECTRONICS INC

Rotor and motor including the same

INFINEON TECHNOLOGOIES NORTH A

Method to prevent oxygen out-diffusion from BSTO containing micro-electronic device

HUNETPLUS CO LTD

Method for fabricating nano-patterned substrate for high-efficiency nitride-based light-emitting diode