Inventor

TSENG HSING-HUANG

US20 patents

⚠️ This page may combine multiple inventors who share the name “TSENG HSING-HUANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TSENG HSING-HUANG

MOTOROLA INC

Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits

Process for forming a semiconductor device

Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region

Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants

Process for fabricating a MOSFET device having reduced reverse short channel effects

Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device

Process for forming a semiconductor device

Method of formation of semiconductor gate dielectric

Method for forming a fluorinated nitrogen containing dielectric

Trench isolator structure in an integrated circuit

Method of forming trench isolation structure in an integrated circuit

Method for fabricating paired MOS transistors having a current-gain differential

Process for forming field isolation and a structure over a semiconductor substrate

Process for reducing halogen concentration in a material layer during semiconductor device fabrication

Process for forming field isolation

Integrated circuit having a jet vapor deposition silicon nitride film and method of making the same

Method for manufacturing a thin oxide for use in semiconductor integrated circuits

Method for forming a reverse dielectric stack

FREESCALE SEMICONDUCTOR INC

Method for forming a dual gate oxide device using a metal oxide and resulting device

Method of making a high quality thin dielectric layer