Inventor
LI JIAN XUN
SG16 patents
⚠️ This page may combine multiple inventors who share the name “LI JIAN XUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
15 patentsUS6709918B1Mar 23, 2004
Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology
CHARTERED SEMICONDUCTOR MFG87 citations96
US6524963B1Feb 25, 2003
Method to improve etching of organic-based, low dielectric constant materials
CHARTERED SEMICONDUCTOR MFG24 citations92
US6410394B1Jun 25, 2002
Method for forming self-aligned channel implants using a gate poly reverse mask
CHARTERED SEMICONDUCTOR MFG21 citations92
US5948701ASep 7, 1999
Self-aligned contact (SAC) etching using polymer-building chemistry
CHARTERED SEMICONDUCTOR MFG32 citations92
US5930627AJul 27, 1999
Process improvements in self-aligned polysilicon MOSFET technology using silicon oxynitride
CHARTERED SEMICONDUCTOR MFG44 citations86
US7022578B2Apr 4, 2006
Heterojunction bipolar transistor using reverse emitter window
CHARTERED SEMICONDUCTOR MFG18 citations83
US6534393B1Mar 18, 2003
Method for fabricating local metal interconnections with low contact resistance and gate electrodes with improved electrical conductivity
CHARTERED SEMICONDUCTOR MFG19 citations83
US6140206AOct 31, 2000
Method to form shallow trench isolation structures
CHARTERED SEMICONDUCTOR MFG17 citations82
US6972237B2Dec 6, 2005
Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth
CHARTERED SEMICONDUCTOR MFG7 citations74
US5792692AAug 11, 1998
Method of fabricating a twin hammer tree shaped capacitor structure for a dram device
CHARTERED SEMICONDUCTOR MFG12 citations74
US6489191B2Dec 3, 2002
Method for forming self-aligned channel implants using a gate poly reverse mask
CHARTERED SEMICONDUCTOR MFG8 citations73
US6924202B2Aug 2, 2005
Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact
CHARTERED SEMICONDUCTOR MFG2 citations63
US6395631B1May 28, 2002
Low dielectric constant dielectric layer fabrication method employing hard mask layer delamination
CHARTERED SEMICONDUCTOR MFG5 citations63
US7238971B2Jul 3, 2007
Self-aligned lateral heterojunction bipolar transistor
CHARTERED SEMICONDUCTOR MFG0 citations52
US6908824B2Jun 21, 2005
Self-aligned lateral heterojunction bipolar transistor
CHARTERED SEMICONDUCTOR MFG1 citations52