Inventor
POHM ARTHUR V
US34 patents
⚠️ This page may combine multiple inventors who share the name “POHM ARTHUR V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NVE CORP
14 patentsUS6777730B2Aug 17, 2004
Antiparallel magnetoresistive memory cells
NVE CORP171 citations99
US6744086B2Jun 1, 2004
Current switched magnetoresistive memory cell
NVE CORP276 citations99
US6538921B2Mar 25, 2003
Circuit selection of magnetic memory cells and related cell structures
NVE CORP81 citations98
US6963098B2Nov 8, 2005
Thermally operated switch control memory cell
NVE CORP63 citations96
US6535416B1Mar 18, 2003
Magnetic memory coincident thermal pulse data storage
NVE CORP71 citations96
US6404191B2Jun 11, 2002
Read heads in planar monolithic integrated circuit chips
NVE CORP76 citations96
US7177178B2Feb 13, 2007
magnetic memory layers thermal pulse transitions
NVE CORP18 citations93
US7148531B2Dec 12, 2006
Magnetoresistive memory SOI cell
NVE CORP27 citations93
US6674664B2Jan 6, 2004
Circuit selected joint magnetoresistive junction tunneling-giant magnetoresistive effects memory cells
NVE CORP23 citations92
US6349053B1Feb 19, 2002
Spin dependent tunneling memory
NVE CORP19 citations92
US7023723B2Apr 4, 2006
Magnetic memory layers thermal pulse transitions
NVE CORP12 citations84
US7813165B2Oct 12, 2010
Magnetic memory layers thermal pulse transitions
NVE CORP4 citations74
US7266013B2Sep 4, 2007
Magnetic memory layers thermal pulse transitions
NVE CORP8 citations74
USRE47583EAug 27, 2019
Circuit selection of magnetic memory cells and related cell structures
NVE CORP0 citations52
NONVOLATILE ELECTRONICS INC
13 patentsUS6021065AFeb 1, 2000
Spin dependent tunneling memory
NONVOLATILE ELECTRONICS INC76 citations96
US5892708AApr 6, 1999
Magnetoresistive memory using large fraction of memory cell films for data storage
NONVOLATILE ELECTRONICS INC85 citations96
US5636159AJun 3, 1997
Magnetoresistive memory using large fractions of memory cell films for data storage
NONVOLATILE ELECTRONICS INC40 citations96
US5424236AJun 13, 1995
Method for forming offset magnetoresistive memory structures
NONVOLATILE ELECTRONICS INC72 citations96
US5420819AMay 30, 1995
Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
NONVOLATILE ELECTRONICS INC86 citations96
US5251170AOct 5, 1993
Offset magnetoresistive memory structures
NONVOLATILE ELECTRONICS INC92 citations96
US6275411B1Aug 14, 2001
Spin dependent tunneling memory
NONVOLATILE ELECTRONICS INC29 citations92
US6147900ANov 14, 2000
Spin dependent tunneling memory
NONVOLATILE ELECTRONICS INC32 citations92
US6072382AJun 6, 2000
Spin dependent tunneling sensor
NONVOLATILE ELECTRONICS INC41 citations92
US5966322AOct 12, 1999
Giant magnetoresistive effect memory cell
NONVOLATILE ELECTRONICS INC34 citations92
US5949707ASep 7, 1999
Giant magnetoresistive effect memory cell
NONVOLATILE ELECTRONICS INC36 citations92
US5768180AJun 16, 1998
Magnetoresistive memory using large fractions of memory cell films for data storage
NONVOLATILE ELECTRONICS INC14 citations82
US6340886B1Jan 22, 2002
Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface
NONVOLATILE ELECTRONICS INC13 citations74
HONEYWELL INC
3 patentsUS4780848AOct 25, 1988
Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
HONEYWELL INC184 citations99
US5060193AOct 22, 1991
Magnetic state entry assurance
HONEYWELL INC20 citations73
US5012444AApr 30, 1991
Opposed field magnetoresistive memory sensing
HONEYWELL INC17 citations72