Inventor
SON JEONG-HWAN
KR40 patents
⚠️ This page may combine multiple inventors who share the name “SON JEONG-HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LG SEMICON CO LTD
23 patentsUS6103562AAug 15, 2000
Method of making semiconductor device with decreased channel width and constant threshold voltage
LG SEMICON CO LTD125 citations98
US6063681AMay 16, 2000
Silicide formation using two metalizations
LG SEMICON CO LTD82 citations96
US5851866ADec 22, 1998
Fabrication method for CMOS with sidewalls
LG SEMICON CO LTD72 citations96
US5750430AMay 12, 1998
Method for making metal oxide semiconductor field effect transistor (MOSFET)
LG SEMICON CO LTD74 citations96
US5696012ADec 9, 1997
Fabrication method of semiconductor memory device containing CMOS transistors
LG SEMICON CO LTD65 citations96
US6383876B1May 7, 2002
MOS device having non-uniform dopant concentration and method for fabricating the same
LG SEMICON CO LTD51 citations94
US6110769AAug 29, 2000
SOI (silicon on insulator) device and method for fabricating the same
LG SEMICON CO LTD40 citations92
US6066534AMay 23, 2000
Method of manufacturing a field effect transistor
LG SEMICON CO LTD47 citations92
US6023088AFeb 8, 2000
Semiconductor device formed on an insulator and having a damaged portion at the interface between the insulator and the active layer
LG SEMICON CO LTD30 citations92
US6010936AJan 4, 2000
Semiconductor device fabrication method
LG SEMICON CO LTD45 citations92
US5759885AJun 2, 1998
Method for fabricating CMOSFET having LDD structure
LG SEMICON CO LTD33 citations92
US5904538AMay 18, 1999
Method for developing shallow trench isolation in a semiconductor memory device
LG SEMICON CO LTD41 citations87
US6064096AMay 16, 2000
Semiconductor LDD device having halo impurity regions
LG SEMICON CO LTD13 citations74
US5877532AMar 2, 1999
Semiconductor device and method of manufacturing the same
LG SEMICON CO LTD8 citations74
US5789266AAug 4, 1998
Metal oxide semiconductor field effect transistor (MOSFET) fabrication method
LG SEMICON CO LTD8 citations74
US6137141AOct 24, 2000
MOS device and fabrication method
LG SEMICON CO LTD8 citations72
US6348715B1Feb 19, 2002
SOI (silicon on insulator) device
LG SEMICON CO LTD6 citations63
US5923057AJul 13, 1999
Bipolar semiconductor device and method for fabricating the same
LG SEMICON CO LTD4 citations63
US6069056AMay 30, 2000
Method of forming isolation structure
LG SEMICON CO LTD5 citations62
US5978259ANov 2, 1999
Semiconductor memory device
LG SEMICON CO LTD6 citations61
US6358805B2Mar 19, 2002
Method of making a SOI device having fixed channel threshold voltage
LG SEMICON CO LTD3 citations60
US6482712B1Nov 19, 2002
Method for fabricating a bipolar semiconductor device
LG SEMICON CO LTD0 citations52
US5877068AMar 2, 1999
Method for forming isolating layer in semiconductor device
LG SEMICON CO LTD1 citations51
HYUNDAI ELECTRONICS IND
13 patentsUS6218248B1Apr 17, 2001
Semiconductor device and method for fabricating the same
HYUNDAI ELECTRONICS IND52 citations95
US6337505B2Jan 8, 2002
Semiconductor device and method for fabricating the same
HYUNDAI ELECTRONICS IND17 citations92
US6210998B1Apr 3, 2001
Semiconductor device formed on an insulator and having a damaged portion at the interface between the insulator and the active layer
HYUNDAI ELECTRONICS IND37 citations92
US6169315B1Jan 2, 2001
Metal oxide semiconductor field effect transistor (MOSFET) and method for making thereof
HYUNDAI ELECTRONICS IND29 citations92
US6146953ANov 14, 2000
Fabrication method for mosfet device
HYUNDAI ELECTRONICS IND20 citations92
US6455402B2Sep 24, 2002
Method of forming retrograde doping file in twin well CMOS device
HYUNDAI ELECTRONICS IND21 citations90
US6251760B1Jun 26, 2001
Semiconductor device and its wiring and a fabrication method thereof
HYUNDAI ELECTRONICS IND16 citations84
US6297136B1Oct 2, 2001
Method for fabricating an embedded semiconductor device
HYUNDAI ELECTRONICS IND10 citations74
US6261910B1Jul 17, 2001
Semiconductor device and method of manufacturing the same
HYUNDAI ELECTRONICS IND6 citations74
US6541341B1Apr 1, 2003
Method for fabricating MOS field effect transistor
HYUNDAI ELECTRONICS IND4 citations63
US6362060B2Mar 26, 2002
Method for forming semiconductor device having a gate in the trench
HYUNDAI ELECTRONICS IND4 citations63
US6462389B2Oct 8, 2002
Semiconductor device
HYUNDAI ELECTRONICS IND3 citations60
US6225682B1May 1, 2001
Semiconductor memory device having isolation structure and method of fabricating the same
HYUNDAI ELECTRONICS IND0 citations52