P

Inventor

YAMAUCHI TADAAKI

JP75 patents
⚠️ This page may combine multiple inventors who share the name “YAMAUCHI TADAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

28 patents
US5838047ANov 17, 1998

CMOS substrate biasing for threshold voltage control

MITSUBISHI ELECTRIC CORP140 citations99
US6088286AJul 11, 2000

Word line non-boosted dynamic semiconductor memory device

MITSUBISHI ELECTRIC CORP121 citations98
US6512715B2Jan 28, 2003

Semiconductor memory device operating with low power consumption

MITSUBISHI ELECTRIC CORP72 citations96
US6373321B1Apr 16, 2002

CMOS semiconductor device

MITSUBISHI ELECTRIC CORP46 citations96
US6064275AMay 16, 2000

Internal voltage generation circuit having ring oscillator whose frequency changes inversely with power supply voltage

MITSUBISHI ELECTRIC CORP84 citations96
US5982162ANov 9, 1999

Internal voltage generation circuit that down-converts external power supply voltage and semiconductor device generating internal power supply voltage on the basis of reference voltage

MITSUBISHI ELECTRIC CORP48 citations96
US5917766AJun 29, 1999

Semiconductor memory device that can carry out read disturb testing and burn-in testing reliably

MITSUBISHI ELECTRIC CORP58 citations96
US6625050B2Sep 23, 2003

Semiconductor memory device adaptable to various types of packages

MITSUBISHI ELECTRIC CORP59 citations95
US6003148ADec 14, 1999

Semiconductor memory device allowing repair of a defective memory cell with a redundant circuit in a multibit test mode

MITSUBISHI ELECTRIC CORP23 citations93
US5789808AAug 4, 1998

Semiconductor device structured to be less susceptible to power supply noise

MITSUBISHI ELECTRIC CORP19 citations93
US5691955ANov 25, 1997

Synchronous semiconductor memory device operating in synchronization with external clock signal

MITSUBISHI ELECTRIC CORP42 citations93
US6240045B1May 29, 2001

Synchronous semiconductor integrated circuit capable of improving immunity from malfunctions

MITSUBISHI ELECTRIC CORP37 citations92
US6084386AJul 4, 2000

Voltage generation circuit capable of supplying stable power supply voltage to load operating in response to timing signal

MITSUBISHI ELECTRIC CORP34 citations92
US5487043AJan 23, 1996

Semiconductor memory device having equalization signal generating circuit

MITSUBISHI ELECTRIC CORP40 citations91
US6552959B2Apr 22, 2003

Semiconductor memory device operable for both of CAS latencies of one and more than one

MITSUBISHI ELECTRIC CORP18 citations84
US6486722B2Nov 26, 2002

Semiconductor device including a control signal generation circuit allowing reduction in size

MITSUBISHI ELECTRIC CORP17 citations84
US6166993ADec 26, 2000

Synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP19 citations84
US5812492ASep 22, 1998

Control signal generation circuit and semiconductor memory device that can correspond to high speed external clock signal

MITSUBISHI ELECTRIC CORP19 citations84
US5801451ASep 1, 1998

Semiconductor device including a plurality of input buffer circuits receiving the same control signal

MITSUBISHI ELECTRIC CORP18 citations84
US5744998AApr 28, 1998

Internal voltage detecting circuit having superior responsibility

MITSUBISHI ELECTRIC CORP19 citations84
US5621343AApr 15, 1997

Demodulator circuit which demodulates pulse width modulated signals used in a semiconductor integrated circuit

MITSUBISHI ELECTRIC CORP14 citations82
US6094090AJul 25, 2000

Differential amplifier circuit, CMOS inverter, demodulator circuit for pulse-width modulation, and sampling circuit

MITSUBISHI ELECTRIC CORP10 citations74
US6064557AMay 16, 2000

Semiconductor device structured to be less susceptible to power supply noise

MITSUBISHI ELECTRIC CORP5 citations74
US6061808AMay 9, 2000

Semiconductor memory device having a multibit test mode

MITSUBISHI ELECTRIC CORP11 citations74
US5978299ANov 2, 1999

Semiconductor memory device having a voltage lowering circuit of which supplying capability increases when column system is in operation

MITSUBISHI ELECTRIC CORP8 citations74
US5973554AOct 26, 1999

Semiconductor device structured to be less susceptible to power supply noise

MITSUBISHI ELECTRIC CORP11 citations74
US5875145AFeb 23, 1999

Semiconductor memory device having a voltage lowering circuit of which supplying capability increases when column system is in operation

MITSUBISHI ELECTRIC CORP8 citations74
US5783957AJul 21, 1998

Differential amplifier circuit, CMOS inverter, demodulator circuit for pulse-width modulation, and sampling circuit

MITSUBISHI ELECTRIC CORP6 citations74

RENESAS TECH CORP

22 patents
US6721223B2Apr 13, 2004

Semiconductor memory device

RENESAS TECH CORP155 citations99
US7466592B2Dec 16, 2008

Semiconductor memory device

RENESAS TECH CORP89 citations98
US7164601B2Jan 16, 2007

Multi-level nonvolatile semiconductor memory device utilizing a nonvolatile semiconductor memory device for storing binary data

RENESAS TECH CORP77 citations98
US7149115B2Dec 12, 2006

Nonvolatile memory device including circuit formed of thin film transistors

RENESAS TECH CORP11 citations93
US7230852B2Jun 12, 2007

Non-volatile semiconductor memory device allowing efficient programming operation and erasing operation in short period of time

RENESAS TECH CORP42 citations92
US6954103B2Oct 11, 2005

Semiconductor device having internal voltage generated stably

RENESAS TECH CORP34 citations92
US6873563B2Mar 29, 2005

Semiconductor circuit device adaptable to plurality of types of packages

RENESAS TECH CORP50 citations92
US6813210B2Nov 2, 2004

Semiconductor memory device requiring refresh operation

RENESAS TECH CORP24 citations92
US6784718B2Aug 31, 2004

Semiconductor device adaptable to a plurality of kinds of interfaces

RENESAS TECH CORP22 citations92
US6744298B2Jun 1, 2004

Semiconductor device

RENESAS TECH CORP23 citations92
US6731558B2May 4, 2004

Semiconductor device

RENESAS TECH CORP39 citations92
US6724223B2Apr 20, 2004

Semiconductor device used in two systems having different power supply voltages

RENESAS TECH CORP26 citations92
US6717460B2Apr 6, 2004

Semiconductor device

RENESAS TECH CORP26 citations92
US6714461B2Mar 30, 2004

Semiconductor device with data output circuit having slew rate adjustable

RENESAS TECH CORP21 citations92
US6697296B2Feb 24, 2004

Clock synchronous semiconductor memory device

RENESAS TECH CORP30 citations92
US6856549B2Feb 15, 2005

Non-volatile semiconductor memory device attaining high data transfer rate

RENESAS TECH CORP12 citations84
US6728827B2Apr 27, 2004

Simply interfaced semiconductor integrated circuit device including logic circuitry and embedded memory circuitry operative with a reduced number of pin terminals

RENESAS TECH CORP14 citations84
US6650582B2Nov 18, 2003

Semiconductor memory device

RENESAS TECH CORP17 citations84
US6724679B2Apr 20, 2004

Semiconductor memory device allowing high density structure or high performance

RENESAS TECH CORP15 citations83
US7365578B2Apr 29, 2008

Semiconductor device with pump circuit

RENESAS TECH CORP5 citations74
US7268612B2Sep 11, 2007

Semiconductor device with pump circuit

RENESAS TECH CORP5 citations74
US6765838B2Jul 20, 2004

Refresh control circuitry for refreshing storage data

RENESAS TECH CORP12 citations74

Showing the top 50 of 75 patents by PatentIndex Score.