Inventor
YAMAUCHI TADAAKI
JP75 patents
⚠️ This page may combine multiple inventors who share the name “YAMAUCHI TADAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
28 patentsUS5838047ANov 17, 1998
CMOS substrate biasing for threshold voltage control
MITSUBISHI ELECTRIC CORP140 citations99
US6088286AJul 11, 2000
Word line non-boosted dynamic semiconductor memory device
MITSUBISHI ELECTRIC CORP121 citations98
US6512715B2Jan 28, 2003
Semiconductor memory device operating with low power consumption
MITSUBISHI ELECTRIC CORP72 citations96
US6373321B1Apr 16, 2002
CMOS semiconductor device
MITSUBISHI ELECTRIC CORP46 citations96
US6064275AMay 16, 2000
Internal voltage generation circuit having ring oscillator whose frequency changes inversely with power supply voltage
MITSUBISHI ELECTRIC CORP84 citations96
US5982162ANov 9, 1999
Internal voltage generation circuit that down-converts external power supply voltage and semiconductor device generating internal power supply voltage on the basis of reference voltage
MITSUBISHI ELECTRIC CORP48 citations96
US5917766AJun 29, 1999
Semiconductor memory device that can carry out read disturb testing and burn-in testing reliably
MITSUBISHI ELECTRIC CORP58 citations96
US6625050B2Sep 23, 2003
Semiconductor memory device adaptable to various types of packages
MITSUBISHI ELECTRIC CORP59 citations95
US6003148ADec 14, 1999
Semiconductor memory device allowing repair of a defective memory cell with a redundant circuit in a multibit test mode
MITSUBISHI ELECTRIC CORP23 citations93
US5789808AAug 4, 1998
Semiconductor device structured to be less susceptible to power supply noise
MITSUBISHI ELECTRIC CORP19 citations93
US5691955ANov 25, 1997
Synchronous semiconductor memory device operating in synchronization with external clock signal
MITSUBISHI ELECTRIC CORP42 citations93
US6240045B1May 29, 2001
Synchronous semiconductor integrated circuit capable of improving immunity from malfunctions
MITSUBISHI ELECTRIC CORP37 citations92
US6084386AJul 4, 2000
Voltage generation circuit capable of supplying stable power supply voltage to load operating in response to timing signal
MITSUBISHI ELECTRIC CORP34 citations92
US5487043AJan 23, 1996
Semiconductor memory device having equalization signal generating circuit
MITSUBISHI ELECTRIC CORP40 citations91
US6552959B2Apr 22, 2003
Semiconductor memory device operable for both of CAS latencies of one and more than one
MITSUBISHI ELECTRIC CORP18 citations84
US6486722B2Nov 26, 2002
Semiconductor device including a control signal generation circuit allowing reduction in size
MITSUBISHI ELECTRIC CORP17 citations84
US6166993ADec 26, 2000
Synchronous semiconductor memory device
MITSUBISHI ELECTRIC CORP19 citations84
US5812492ASep 22, 1998
Control signal generation circuit and semiconductor memory device that can correspond to high speed external clock signal
MITSUBISHI ELECTRIC CORP19 citations84
US5801451ASep 1, 1998
Semiconductor device including a plurality of input buffer circuits receiving the same control signal
MITSUBISHI ELECTRIC CORP18 citations84
US5744998AApr 28, 1998
Internal voltage detecting circuit having superior responsibility
MITSUBISHI ELECTRIC CORP19 citations84
US5621343AApr 15, 1997
Demodulator circuit which demodulates pulse width modulated signals used in a semiconductor integrated circuit
MITSUBISHI ELECTRIC CORP14 citations82
US6094090AJul 25, 2000
Differential amplifier circuit, CMOS inverter, demodulator circuit for pulse-width modulation, and sampling circuit
MITSUBISHI ELECTRIC CORP10 citations74
US6064557AMay 16, 2000
Semiconductor device structured to be less susceptible to power supply noise
MITSUBISHI ELECTRIC CORP5 citations74
US6061808AMay 9, 2000
Semiconductor memory device having a multibit test mode
MITSUBISHI ELECTRIC CORP11 citations74
US5978299ANov 2, 1999
Semiconductor memory device having a voltage lowering circuit of which supplying capability increases when column system is in operation
MITSUBISHI ELECTRIC CORP8 citations74
US5973554AOct 26, 1999
Semiconductor device structured to be less susceptible to power supply noise
MITSUBISHI ELECTRIC CORP11 citations74
US5875145AFeb 23, 1999
Semiconductor memory device having a voltage lowering circuit of which supplying capability increases when column system is in operation
MITSUBISHI ELECTRIC CORP8 citations74
US5783957AJul 21, 1998
Differential amplifier circuit, CMOS inverter, demodulator circuit for pulse-width modulation, and sampling circuit
MITSUBISHI ELECTRIC CORP6 citations74
RENESAS TECH CORP
22 patentsUS6721223B2Apr 13, 2004
Semiconductor memory device
RENESAS TECH CORP155 citations99
US7466592B2Dec 16, 2008
Semiconductor memory device
RENESAS TECH CORP89 citations98
US7164601B2Jan 16, 2007
Multi-level nonvolatile semiconductor memory device utilizing a nonvolatile semiconductor memory device for storing binary data
RENESAS TECH CORP77 citations98
US7149115B2Dec 12, 2006
Nonvolatile memory device including circuit formed of thin film transistors
RENESAS TECH CORP11 citations93
US7230852B2Jun 12, 2007
Non-volatile semiconductor memory device allowing efficient programming operation and erasing operation in short period of time
RENESAS TECH CORP42 citations92
US6954103B2Oct 11, 2005
Semiconductor device having internal voltage generated stably
RENESAS TECH CORP34 citations92
US6873563B2Mar 29, 2005
Semiconductor circuit device adaptable to plurality of types of packages
RENESAS TECH CORP50 citations92
US6813210B2Nov 2, 2004
Semiconductor memory device requiring refresh operation
RENESAS TECH CORP24 citations92
US6784718B2Aug 31, 2004
Semiconductor device adaptable to a plurality of kinds of interfaces
RENESAS TECH CORP22 citations92
US6744298B2Jun 1, 2004
Semiconductor device
RENESAS TECH CORP23 citations92
US6731558B2May 4, 2004
Semiconductor device
RENESAS TECH CORP39 citations92
US6724223B2Apr 20, 2004
Semiconductor device used in two systems having different power supply voltages
RENESAS TECH CORP26 citations92
US6717460B2Apr 6, 2004
Semiconductor device
RENESAS TECH CORP26 citations92
US6714461B2Mar 30, 2004
Semiconductor device with data output circuit having slew rate adjustable
RENESAS TECH CORP21 citations92
US6697296B2Feb 24, 2004
Clock synchronous semiconductor memory device
RENESAS TECH CORP30 citations92
US6856549B2Feb 15, 2005
Non-volatile semiconductor memory device attaining high data transfer rate
RENESAS TECH CORP12 citations84
US6728827B2Apr 27, 2004
Simply interfaced semiconductor integrated circuit device including logic circuitry and embedded memory circuitry operative with a reduced number of pin terminals
RENESAS TECH CORP14 citations84
US6650582B2Nov 18, 2003
Semiconductor memory device
RENESAS TECH CORP17 citations84
US6724679B2Apr 20, 2004
Semiconductor memory device allowing high density structure or high performance
RENESAS TECH CORP15 citations83
US7365578B2Apr 29, 2008
Semiconductor device with pump circuit
RENESAS TECH CORP5 citations74
US7268612B2Sep 11, 2007
Semiconductor device with pump circuit
RENESAS TECH CORP5 citations74
US6765838B2Jul 20, 2004
Refresh control circuitry for refreshing storage data
RENESAS TECH CORP12 citations74
Showing the top 50 of 75 patents by PatentIndex Score.