Inventor
HUANG CHING-FANG
TW19 patents
⚠️ This page may combine multiple inventors who share the name “HUANG CHING-FANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
11 patentsUS9887269B2Feb 6, 2018
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD151 citations99
US9899387B2Feb 20, 2018
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US8981479B2Mar 17, 2015
Multi-gate semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11355611B2Jun 7, 2022
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10811509B2Oct 20, 2020
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10790280B2Sep 29, 2020
Multi-gate device and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10510776B2Dec 17, 2019
Semiconductor device with common active area and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11145678B2Oct 12, 2021
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10276693B1Apr 30, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9502409B2Nov 22, 2016
Multi-gate semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9755075B2Sep 5, 2017
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
4 patentsUS8765533B2Jul 1, 2014
Fin-like field effect transistor (FinFET) channel profile engineering method and associated device
TAIWAN SEMICONDUCTOR MFG21 citations92
US9093566B2Jul 28, 2015
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG5 citations83
US9318322B2Apr 19, 2016
FinFET design controlling channel thickness
TAIWAN SEMICONDUCTOR MFG3 citations73
US9293378B2Mar 22, 2016
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG1 citations62