Inventor

SHEPARD JR JOSEPH F

US40 patents

⚠️ This page may combine multiple inventors who share the name “SHEPARD JR JOSEPH F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHEPARD JR JOSEPH F

IBM

Cooling system for a semiconductor device and method of fabricating same

High density chip carrier with integrated passive devices

Cooling system for a semiconductor device and method of fabricating same

High density chip carrier with integrated passive devices

Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability

High density MIMCAP with a unit repeatable structure

Metal spacer gate for CMOS FET

High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuits

High dielectric constant materials as gate dielectrics (insulators)

High dielectric constant materials forming components of DRAM storage cells

Semiconductor method and structure for simultaneously forming a trench capacitor dielectric and trench sidewall device dielectric

Method and structure for salicide trench capacitor plate electrode

Prevention of Ta2O5 mim cap shorting in the beol anneal cycles

Integration system via metal oxide conversion

Method of manufacturing high dielectric constant material

Hydroxyl group termination for nucleation of a dielectric metallic oxide

Concurrently forming nFET and pFET gate dielectric layers

Cooling system for a semiconductor device and method of fabricating same

Methods for the determination of film continuity and growth modes in thin dielectric films

Integration system via metal oxide conversion

High dielectric constant materials forming components of DRAM such as deep-trench capacitors and gate dielectric (insulators) for support circuits

X-ray printing personalization technique

Hydroxyl group termination for nucleation of a dielectric metallic oxide

High dielectric constant materials

X-ray printing personalization technique

Combined stepper and deposition tool

GLOBALFOUNDRIES INC

Microwave annealing of flowable oxides with trap layers

Airgaps to isolate metallization features

Semiconductor device including graded gate stack, related method and design structure

Integrated circuit structure having thin gate dielectric device and thick gate dielectric device

Single-curvature cavity for semiconductor epitaxy

Modified tungsten silicon

CHUDZIK MICHAEL P

Fabrication of silicon oxide and oxynitride having sub-nanometer thickness

Method of manufacturing scaled equivalent oxide thickness gate stacks in semiconductor devices and related design structure

INFINEON TECHNOLOGIES AG

Low resistivity deep trench fill for DRAM and EDRAM applications

INFINEON TECHNOLOGIES CORP

Silicon nitride island formation for increased capacitance

KRISHNAN RISHIKESH

Method of fabricating a deep trench (DT) metal-insulator-metal (MIM) capacitor

BRODSKY MARYJANE

Composite high-k gate dielectric stack for reducing gate leakage

ANDREONI WANDA

Method of forming metal/high-κ gate stacks with high mobility

SHEPARD JR JOSEPH F

Insulating layers on different semiconductor materials