Inventor
CHENG ZHIYUAN
US36 patents
⚠️ This page may combine multiple inventors who share the name “CHENG ZHIYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
13 patentsUS8629477B2Jan 14, 2014
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TAIWAN SEMICONDUCTOR MFG35 citations98
US7875958B2Jan 25, 2011
Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
TAIWAN SEMICONDUCTOR MFG123 citations98
US8384196B2Feb 26, 2013
Formation of devices by epitaxial layer overgrowth
TAIWAN SEMICONDUCTOR MFG39 citations97
US8034697B2Oct 11, 2011
Formation of devices by epitaxial layer overgrowth
TAIWAN SEMICONDUCTOR MFG76 citations96
US8860160B2Oct 14, 2014
Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
TAIWAN SEMICONDUCTOR MFG10 citations92
US8796734B2Aug 5, 2014
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TAIWAN SEMICONDUCTOR MFG16 citations92
US8519436B2Aug 27, 2013
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TAIWAN SEMICONDUCTOR MFG17 citations92
US9105522B2Aug 11, 2015
Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
TAIWAN SEMICONDUCTOR MFG4 citations83
US9219112B2Dec 22, 2015
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TAIWAN SEMICONDUCTOR MFG3 citations74
US8987028B2Mar 24, 2015
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TAIWAN SEMICONDUCTOR MFG3 citations74
US9356103B2May 31, 2016
Reduction of edge effects from aspect ratio trapping
TAIWAN SEMICONDUCTOR MFG1 citations63
US9105549B2Aug 11, 2015
Semiconductor sensor structures with reduced dislocation defect densities
TAIWAN SEMICONDUCTOR MFG0 citations52
US8994070B2Mar 31, 2015
Reduction of edge effects from aspect ratio trapping
TAIWAN SEMICONDUCTOR MFG0 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
7 patentsUS9431243B2Aug 30, 2016
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9559712B2Jan 31, 2017
Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10680126B2Jun 9, 2020
Photovoltaics on silicon
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9780190B2Oct 3, 2017
InP-based transistor fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9640395B2May 2, 2017
Reduction of edge effects from aspect ratio trapping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9455299B2Sep 27, 2016
Methods for semiconductor sensor structures with reduced dislocation defect densities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10541315B2Jan 21, 2020
INP-based transistor fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
CHENG ZHIYUAN
6 patentsUS8274097B2Sep 25, 2012
Reduction of edge effects from aspect ratio trapping
CHENG ZHIYUAN70 citations97
US8253211B2Aug 28, 2012
Semiconductor sensor structures with reduced dislocation defect densities
CHENG ZHIYUAN36 citations95
US8629047B2Jan 14, 2014
Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
CHENG ZHIYUAN10 citations92
US8216951B2Jul 10, 2012
Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
CHENG ZHIYUAN27 citations92
US8629045B2Jan 14, 2014
Reduction of edge effects from aspect ratio trapping
CHENG ZHIYUAN6 citations84
US8809106B2Aug 19, 2014
Method for semiconductor sensor structures with reduced dislocation defect densities
CHENG ZHIYUAN0 citations51
MASSACHUSETTS INST TECHNOLOGY
4 patentsUS7304336B2Dec 4, 2007
FinFET structure and method to make the same
MASSACHUSETTS INST TECHNOLOGY59 citations97
US6940089B2Sep 6, 2005
Semiconductor device structure
MASSACHUSETTS INST TECHNOLOGY62 citations96
US7390701B2Jun 24, 2008
Method of forming a digitalized semiconductor structure
MASSACHUSETTS INST TECHNOLOGY16 citations92
US7348259B2Mar 25, 2008
Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers
MASSACHUSETTS INST TECHNOLOGY27 citations92