Inventor
KOUZNETSOV IGOR G
US28 patents
⚠️ This page may combine multiple inventors who share the name “KOUZNETSOV IGOR G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CYPRESS SEMICONDUCTOR CORP
18 patentsUS8796098B1Aug 5, 2014
Embedded SONOS based memory cells
CYPRESS SEMICONDUCTOR CORP19 citations92
US7969804B1Jun 28, 2011
Memory architecture having a reference current generator that provides two reference currents
CYPRESS SEMICONDUCTOR CORP25 citations91
US9431124B2Aug 30, 2016
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP7 citations84
US9356035B2May 31, 2016
Embedded SONOS based memory cells
CYPRESS SEMICONDUCTOR CORP5 citations84
US8988938B2Mar 24, 2015
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP6 citations84
US8675405B1Mar 18, 2014
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP11 citations84
US10262747B2Apr 16, 2019
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP2 citations73
US9847137B2Dec 19, 2017
Method to reduce program disturbs in non-volatile memory cells
CYPRESS SEMICONDUCTOR CORP2 citations73
US10217639B1Feb 26, 2019
Method of forming drain extended MOS transistors for high voltage circuits
CYPRESS SEMICONDUCTOR CORP2 citations72
US9466374B2Oct 11, 2016
Systems, methods, and apparatus for memory cells with common source lines
CYPRESS SEMICONDUCTOR CORP3 citations72
US10032517B2Jul 24, 2018
Memory architecture having two independently controlled voltage pumps
CYPRESS SEMICONDUCTOR CORP2 citations71
US9704585B2Jul 11, 2017
High voltage architecture for non-volatile memory
CYPRESS SEMICONDUCTOR CORP3 citations68
US9922988B2Mar 20, 2018
Embedded SONOS based memory cells
CYPRESS SEMICONDUCTOR CORP1 citations63
US9620516B2Apr 11, 2017
Embedded SONOS based memory cells
CYPRESS SEMICONDUCTOR CORP1 citations63
US9627073B2Apr 18, 2017
Systems, methods, and apparatus for memory cells with common source lines
CYPRESS SEMICONDUCTOR CORP0 citations52
US9818484B2Nov 14, 2017
Systems, methods, and apparatus for memory cells with common source lines
CYPRESS SEMICONDUCTOR CORP0 citations51
US10373688B2Aug 6, 2019
High voltage architecture for non-volatile memory
CYPRESS SEMICONDUCTOR CORP0 citations50
US9899089B1Feb 20, 2018
Memory architecture having two independently controlled voltage pumps
CYPRESS SEMICONDUCTOR CORP0 citations50
SANDISK 3D LLC
4 patentsUS7825455B2Nov 2, 2010
Three terminal nonvolatile memory device with vertical gated diode
SANDISK 3D LLC55 citations98
US8853765B2Oct 7, 2014
Dense arrays and charge storage devices
SANDISK 3D LLC28 citations96
US9171857B2Oct 27, 2015
Dense arrays and charge storage devices
SANDISK 3D LLC8 citations92
US7615436B2Nov 10, 2009
Two mask floating gate EEPROM and method of making
SANDISK 3D LLC23 citations92
MATRIX SEMICONDUCTOR INC
3 patentsUS6888750B2May 3, 2005
Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
MATRIX SEMICONDUCTOR INC497 citations99
US6897514B2May 24, 2005
Two mask floating gate EEPROM and method of making
MATRIX SEMICONDUCTOR INC69 citations98
US6704235B2Mar 9, 2004
Anti-fuse memory cell with asymmetric breakdown voltage
MATRIX SEMICONDUCTOR INC81 citations98