Inventor

ANTHONY THOMAS C

US84 patents

⚠️ This page may combine multiple inventors who share the name “ANTHONY THOMAS C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ANTHONY THOMAS C

HEWLETT PACKARD DEVELOPMENT CO

Magnetic memory device having soft reference layer

Method of fabricating high density sub-lithographic features on a substrate

One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells

Multi-bit magnetic memory device

One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same

Thermally-assisted magnetic memory structures

Magnetic memory device having improved switching characteristics

MRAM with asymmetric cladded conductor

Method of fabricating an MRAM device including spin dependent tunneling junction memory cells

Vertically oriented nano-fuse and nano-resistor circuit elements

Magneto-resistive device including clad conductor

One time programmable fuse/anti-fuse combination based memory cell

Magneto resistive storage device having a magnetic field sink layer

Conductor structure for a magnetic memory

Direct connect solid-state storage device

Method and article for concentrating fields at sense layers

In-plane toroidal memory cell with vertically stepped conductors

Magnetic memory cell having a soft reference layer

Thermally-assisted magnetic memory structures

Method of fabricating a MRAM device

Memory device with a thermally assisted write

Magnetic memory using reverse magnetic field to improve half-select margin

Display device including variable optical element and programmable resistance element

Magnetic memory device

Retrieving data stored in a magnetic integrated memory

Forming a contact in a thin-film device

Magneto resistive storage device having a magnetic field sink layer

Magnetic memory structure

Magnetic memory device having soft reference layer

Magnetic memory device and methods for making same

HEWLETT PACKARD CO

3-D memory device for large storage capacity

Write-once thin-film memory

Memory device having memory cells with magnetic tunnel junction and tunnel junction in series

Short-tolerant resistive cross point array

Solid-state memory with magnetic storage cells

Magnetically stable magnetoresistive memory element

Magnetic memory cell with symmetric switching characteristics

Robust recording head for near-contact operation

Dielectric films for use in magnetoresistive transducers

Method for fabricating cladding layer in top conductor

Method for forming magnetic memory with structures that prevent disruptions to magnetization in sense layers

Ferromagnetic tunnel junctions with enhanced magneto-resistance

Tapered conductors for magnetoresistive transducers

Stabilization of magnetoresistive sensors using the longitudinal field produced by the current in the contact leads

Solid-state memory with magnetic storage cells

Method of making a thin film recording head apparatus utilizing polyimide films

Stabilized magnetic memory cell

Method of forming ferromagnetic tunnel junctions with enhanced magneto-resistance

HEWLETT PACKARD COMPANY INTELL

Cladded read-write conductor for a pinned-on-the-fly soft reference layer

SAMSUNG ELECTRONICS CO LTD

Heating MRAM cells to ease state switching