Inventor

XIA LI-QUN

US197 patents

⚠️ This page may combine multiple inventors who share the name “XIA LI-QUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

XIA LI-QUN

APPLIED MATERIALS INC

Two-layer film for next generation damascene barrier application with good oxidation resistance

Post-deposition treatment to enhance properties of Si-O-C low k films

Methods and apparatus to enhance properties of Si-O-C low K films

Process for forming a low dielectric constant carbon-containing film

Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition

Method of depositing low k films using an oxidizing plasma

Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill

Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers

Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound

Methods and apparatus for gettering fluorine from chamber material surfaces

Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process

Methods for shallow trench isolation

Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions

Method and apparatus for gettering fluorine from chamber material surfaces

Methods and apparatus for cleaning surfaces in a substrate processing system

Methods and systems for forming at least one dielectric layer

Decreasing the etch rate of silicon nitride by carbon addition

Method for producing gate stack sidewall spacers

In-situ oxide capping after CVD low k deposition

Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power

Method of improving stability in low k barrier layers

Method of depositing dielectric films

Method of eliminating photoresist poisoning in damascene applications

Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film

Method for cleaning a process chamber

CVD plasma assisted lower dielectric constant sicoh film

Post-deposition treatment to enhance properties of Si-O-C low K films

Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing

Method of reducing undesired etching of insulation due to elevated boron concentrations

Methods and apparatus for shallow trench isolation

Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films

Method of depositing dielectric materials in damascene applications

Method for densification of CVD carbon-doped silicon oxide films through UV irradiation

Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber

Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices

UV radiation source for densification of CVD carbon-doped silicon oxide films

Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing

Method of depositing organosilicate layers

Methods and apparatus for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions

Dielectric film deposition employing a bistertiarybutylaminesilane precursor

Gapfill improvement with low etch rate dielectric liners

Method of modifying interlayer adhesion

Method of depositing low k barrier layers

Two-step borophosphosilicate glass deposition process and related devices and apparatus

Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films

Boron diffusion barrier by nitrogen incorporation in spacer dielectrics

BALSEANU MIHAELA

Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure

Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure

XU HUIWEN

Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k&lt;2.5) dielectrics

XIA LI-QUN

Post-deposition treatment to enhance properties of Si-O-C low K films

Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics