Inventor
SUH BONG SEOK
KR20 patents
⚠️ This page may combine multiple inventors who share the name “SUH BONG SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS7335590B2Feb 26, 2008
Method of fabricating semiconductor device by forming diffusion barrier layer selectively and semiconductor device fabricated thereby
SAMSUNG ELECTRONICS CO LTD21 citations92
US7332764B2Feb 19, 2008
Metal-insulator-metal (MIM) capacitor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD38 citations92
US6953745B2Oct 11, 2005
Void-free metal interconnection structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD17 citations84
US10804265B2Oct 13, 2020
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11784186B2Oct 10, 2023
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US11101269B2Aug 24, 2021
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations70
US7655525B2Feb 2, 2010
Semiconductor device free of gate spacer stress and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US12107135B2Oct 1, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11967614B2Apr 23, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11322589B2May 3, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11139382B2Oct 5, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US7863201B2Jan 4, 2011
Methods of forming field effect transistors having silicided source/drain contacts with low contact resistance
SAMSUNG ELECTRONICS CO LTD4 citations61
US12183734B2Dec 31, 2024
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11538807B2Dec 27, 2022
Method for fabricating a semiconductor device including a gate structure with an inclined side wall
SAMSUNG ELECTRONICS CO LTD0 citations60
US11011519B2May 18, 2021
Semiconductor device including gate structure having device isolation film
SAMSUNG ELECTRONICS CO LTD0 citations60
US7341908B2Mar 11, 2008
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US11063150B2Jul 13, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US10636793B2Apr 28, 2020
FINFETs having electrically insulating diffusion break regions therein and methods of forming same
SAMSUNG ELECTRONICS CO LTD0 citations39