Inventor
HARA AKITO
JP21 patents
⚠️ This page may combine multiple inventors who share the name “HARA AKITO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
17 patentsUS6677222B1Jan 13, 2004
Method of manufacturing semiconductor device with polysilicon film
FUJITSU LTD77 citations97
US6582996B1Jun 24, 2003
Semiconductor thin film forming method
FUJITSU LTD49 citations96
US6737672B2May 18, 2004
Semiconductor device, manufacturing method thereof, and semiconductor manufacturing apparatus
FUJITSU LTD59 citations95
US6660085B2Dec 9, 2003
Polycrystal thin film forming method and forming system
FUJITSU LTD29 citations92
US6566754B2May 20, 2003
Polycrystalline semiconductor device and its manufacture method
FUJITSU LTD19 citations92
US6335266B1Jan 1, 2002
Hydrogen-doped polycrystalline group IV-based TFT having a larger number of monohydride-IV bonds than higher order-IV bonds
FUJITSU LTD38 citations92
US6287944B1Sep 11, 2001
Polycrystalline semiconductor device and its manufacture method
FUJITSU LTD41 citations92
US6255148B1Jul 3, 2001
Polycrystal thin film forming method and forming system
FUJITSU LTD34 citations92
US5970369AOct 19, 1999
Semiconductor device with polysilicon layer of good crystallinity and its manufacture method
FUJITSU LTD46 citations92
US6861328B2Mar 1, 2005
Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus
FUJITSU LTD25 citations91
US6821343B2Nov 23, 2004
Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus
FUJITSU LTD13 citations91
US6909118B2Jun 21, 2005
Semiconductor device and method of fabricating the same
FUJITSU LTD13 citations84
US5505157AApr 9, 1996
Low hydrogen-content silicon crystal with few micro-defects caused from annealing, and its manufacturing methods
FUJITSU LTD17 citations80
US6927419B2Aug 9, 2005
Semiconductor device
FUJITSU LTD11 citations74
US6692999B2Feb 17, 2004
Polysilicon film forming method
FUJITSU LTD9 citations74
US6767773B2Jul 27, 2004
Method of Production of a thin film type semiconductor device having a heat-retaining layer
FUJITSU LTD7 citations72
US5641353AJun 24, 1997
Low hydrogen-content silicon crystal with few micro-defects caused from annealing
FUJITSU LTD9 citations72