Inventor
TSUI TING YIU
US12 patents
⚠️ This page may combine multiple inventors who share the name “TSUI TING YIU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
9 patentsUS6498112B1Dec 24, 2002
Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) films
ADVANCED MICRO DEVICES INC34 citations91
US6147507ANov 14, 2000
System and method of mapping leakage current and a defect profile of a semiconductor dielectric layer
ADVANCED MICRO DEVICES INC20 citations91
US6023327AFeb 8, 2000
System and method for detecting defects in an interlayer dielectric of a semiconductor device
ADVANCED MICRO DEVICES INC23 citations91
US6881665B1Apr 19, 2005
Depth of focus (DOF) for trench-first-via-last (TFVL) damascene processing with hard mask and low viscosity photoresist
ADVANCED MICRO DEVICES INC13 citations83
US6607945B2Aug 19, 2003
Laser-assisted silicide fuse programming
ADVANCED MICRO DEVICES INC12 citations72
US6177802B1Jan 23, 2001
System and method for detecting defects in an interlayer dielectric of a semiconductor device using the hall-effect
ADVANCED MICRO DEVICES INC9 citations72
US6407558B2Jun 18, 2002
Method of determining the doping concentration across a surface of a semiconductor material
ADVANCED MICRO DEVICES INC4 citations61
US6320403B1Nov 20, 2001
Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material
ADVANCED MICRO DEVICES INC4 citations61
US6208154B1Mar 27, 2001
Method of determining the doping concentration across a surface of a semiconductor material
ADVANCED MICRO DEVICES INC3 citations61
TEXAS INSTRUMENTS INC
3 patentsUS6489238B1Dec 3, 2002
Method to reduce photoresist contamination from silicon carbide films
TEXAS INSTRUMENTS INC21 citations91
US7282436B2Oct 16, 2007
Plasma treatment for silicon-based dielectrics
TEXAS INSTRUMENTS INC4 citations62
US7342315B2Mar 11, 2008
Method to increase mechanical fracture robustness of porous low k dielectric materials
TEXAS INSTRUMENTS INC2 citations58