P

Inventor

TALWAR SOMIT

US34 patents
⚠️ This page may combine multiple inventors who share the name “TALWAR SOMIT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ULTRATECH STEPPER INC

22 patents
US6747245B2Jun 8, 2004

Laser scanning apparatus and methods for thermal processing

ULTRATECH STEPPER INC190 citations99
US6635588B1Oct 21, 2003

Method for laser thermal processing using thermally induced reflectivity switch

ULTRATECH STEPPER INC287 citations99
US6479821B1Nov 12, 2002

Thermally induced phase switch for laser thermal processing

ULTRATECH STEPPER INC289 citations99
US6380044B1Apr 30, 2002

High-speed semiconductor transistor and selective absorption process forming same

ULTRATECH STEPPER INC95 citations98
US6365476B1Apr 2, 2002

Laser thermal process for fabricating field-effect transistors

ULTRATECH STEPPER INC125 citations98
US5908307AJun 1, 1999

Fabrication method for reduced-dimension FET devices

ULTRATECH STEPPER INC138 citations97
US5888888AMar 30, 1999

Method for forming a silicide region on a silicon body

ULTRATECH STEPPER INC122 citations97
US6645838B1Nov 11, 2003

Selective absorption process for forming an activated doped region in a semiconductor

ULTRATECH STEPPER INC60 citations96
US6495390B2Dec 17, 2002

Thermally induced reflectivity switch for laser thermal processing

ULTRATECH STEPPER INC38 citations96
US6383956B2May 7, 2002

Method of forming thermally induced reflectivity switch for laser thermal processing

ULTRATECH STEPPER INC61 citations96
US6303476B1Oct 16, 2001

Thermally induced reflectivity switch for laser thermal processing

ULTRATECH STEPPER INC62 citations96
US6300208B1Oct 9, 2001

Methods for annealing an integrated device using a radiant energy absorber layer

ULTRATECH STEPPER INC61 citations96
US6274488B1Aug 14, 2001

Method of forming a silicide region in a Si substrate and a device having same

ULTRATECH STEPPER INC79 citations96
US5956603ASep 21, 1999

Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits

ULTRATECH STEPPER INC83 citations96
US6420264B1Jul 16, 2002

Method of forming a silicide region in a Si substrate and a device having same

ULTRATECH STEPPER INC41 citations93
US6388297B1May 14, 2002

Structure and method for an optical block in shallow trench isolation for improved laser anneal control

ULTRATECH STEPPER INC20 citations93
US6326219B2Dec 4, 2001

Methods for determining wavelength and pulse length of radiant energy used for annealing

ULTRATECH STEPPER INC29 citations93
US6387803B2May 14, 2002

Method for forming a silicide region on a silicon body

ULTRATECH STEPPER INC37 citations92
US6297135B1Oct 2, 2001

Method for forming silicide regions on an integrated device

ULTRATECH STEPPER INC42 citations92
US6635541B1Oct 21, 2003

Method for annealing using partial absorber layer exposed to radiant energy and article made with partial absorber layer

ULTRATECH STEPPER INC29 citations91
US6570656B1May 27, 2003

Illumination fluence regulation system and method for use in thermal processing employed in the fabrication of reduced-dimension integrated circuits

ULTRATECH STEPPER INC48 citations91
US6777317B2Aug 17, 2004

Method for semiconductor gate doping

ULTRATECH STEPPER INC41 citations87

ULTRATECH INC

12 patents