Inventor

CHUNG JUNG-HEE

KR21 patents

⚠️ This page may combine multiple inventors who share the name “CHUNG JUNG-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHUNG JUNG-HEE

SAMSUNG ELECTRONICS CO LTD

Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions

Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrode

Methods of forming a semiconductor device including a metal silicide layer between a conductive plug and a bottom electrode of a capacitor

Capacitor, method of forming the same, semiconductor device having the capacitor and method of manufacturing the same

Capacitors having composite dielectric layers containing crystallization inhibiting regions

Methods and batch type atomic layer deposition apparatus for forming dielectric films and methods of manufacturing metal-insulator-metal capacitors including the dielectric films

Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same

Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode

Methods of forming capacitors including reducing exposed electrodes in semiconductor devices

Methods of forming integrated circuits devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate

Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions

Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities

Methods of forming storage capacitors for semiconductor devices

Integrated circuit devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate

Semiconductor device capacitors with oxide-nitride layers and methods of fabricating such capacitors

Methods of forming MIM type capacitor structures using low temperature plasma processing

Method of manufacturing a dielectric film in a capacitor

Metal-insulator-metal capacitors including transition metal silicide films on doped polysilicon contact plugs

Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions and methods of forming same

Semiconductor devices having a contact plug and fabrication methods thereof

CHUNG SEUNG-SIK

Method of forming semiconductor device having a capacitor