Inventor
CHO HOOSUNG
KR21 patents
⚠️ This page may combine multiple inventors who share the name “CHO HOOSUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
12 patentsUS9735170B2Aug 15, 2017
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations92
US9245839B2Jan 26, 2016
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations92
US10546872B2Jan 28, 2020
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations84
US10763222B2Sep 1, 2020
Three-dimensional semiconductor devices having vertical structures of different lengths
SAMSUNG ELECTRONICS CO LTD8 citations83
US11871571B2Jan 9, 2024
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11456335B2Sep 27, 2022
Vertical memory devices
SAMSUNG ELECTRONICS CO LTD6 citations73
US11387249B2Jul 12, 2022
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US12490433B2Dec 2, 2025
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12464721B2Nov 4, 2025
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12336177B2Jun 17, 2025
Nonvolatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10431593B2Oct 1, 2019
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD1 citations60
US9219072B2Dec 22, 2015
Nonvolatile memory devices having a three dimensional structure utilizing strapping of a common source region and/or a well region
SAMSUNG ELECTRONICS CO LTD0 citations52