Inventor
LEE MYOUNG-BUM
KR31 patents
⚠️ This page may combine multiple inventors who share the name “LEE MYOUNG-BUM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
25 patentsUS5656337AAug 12, 1997
Method of forming a dielectric layer
SAMSUNG ELECTRONICS CO LTD54 citations94
US6787468B2Sep 7, 2004
Method of fabricating metal lines in a semiconductor device
SAMSUNG ELECTRONICS CO LTD40 citations93
US6432820B1Aug 13, 2002
Method of selectively depositing a metal layer in an opening in a dielectric layer by forming a metal-deposition-prevention layer around the opening of the dielectric layer
SAMSUNG ELECTRONICS CO LTD43 citations93
US6849555B2Feb 1, 2005
Wafer processing apparatus and wafer processing method using the same
SAMSUNG ELECTRONICS CO LTD15 citations92
US6586340B2Jul 1, 2003
Wafer processing apparatus and wafer processing method using the same
SAMSUNG ELECTRONICS CO LTD19 citations92
US6573147B2Jun 3, 2003
Method of forming a semiconductor device having contact using crack-protecting layer
SAMSUNG ELECTRONICS CO LTD19 citations92
US6010940AJan 4, 2000
Methods for fabricating CVD TiN barrier layers for capacitor structures
SAMSUNG ELECTRONICS CO LTD37 citations92
US5742472AApr 21, 1998
Stacked capacitors for integrated circuit devices and related methods
SAMSUNG ELECTRONICS CO LTD25 citations92
US7723755B2May 25, 2010
Semiconductor having buried word line cell structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD18 citations84
US7646067B2Jan 12, 2010
Complementary metal-oxide-semiconductor transistor including multiple gate conductive layers and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US6602782B2Aug 5, 2003
Methods for forming metal wiring layers and metal interconnects and metal interconnects formed thereby
SAMSUNG ELECTRONICS CO LTD18 citations84
US9184178B2Nov 10, 2015
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations83
US6399457B2Jun 4, 2002
Semiconductor device having capacitor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations74
US6858529B2Feb 22, 2005
Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus
SAMSUNG ELECTRONICS CO LTD9 citations72
US5560778AOct 1, 1996
Apparatus for forming a dielectric layer
SAMSUNG ELECTRONICS CO LTD5 citations72
US6699790B2Mar 2, 2004
Semiconductor device fabrication method for filling high aspect ratio openings in insulators with aluminum
SAMSUNG ELECTRONICS CO LTD5 citations63
US7585756B2Sep 8, 2009
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7211769B2May 1, 2007
Heating chamber and method of heating a wafer
SAMSUNG ELECTRONICS CO LTD2 citations62
US7176533B2Feb 13, 2007
Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus
SAMSUNG ELECTRONICS CO LTD2 citations61
US7800162B2Sep 21, 2010
Nonvolatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations60
US7696563B2Apr 13, 2010
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US6261890B1Jul 17, 2001
Semiconductor device having capacitor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7790591B2Sep 7, 2010
Methods of manufacturing semiconductor devices including metal oxide layers
SAMSUNG ELECTRONICS CO LTD0 citations49
US6953741B2Oct 11, 2005
Methods of fabricating contacts for semiconductor devices utilizing a pre-flow process
SAMSUNG ELECTRONICS CO LTD0 citations45
US9299826B2Mar 29, 2016
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations40