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Inventor

BANNA SRINIVASA R

US12 patents
⚠️ This page may combine multiple inventors who share the name “BANNA SRINIVASA R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

4 patents
US9263133B2Feb 16, 2016

Techniques for providing a semiconductor memory device

MICRON TECHNOLOGY INC7 citations78
US9524971B2Dec 20, 2016

Techniques for providing a semiconductor memory device

MICRON TECHNOLOGY INC0 citations51
US9019759B2Apr 28, 2015

Techniques for providing a semiconductor memory device

MICRON TECHNOLOGY INC0 citations51
US8982633B2Mar 17, 2015

Techniques for providing a direct injection semiconductor memory device

MICRON TECHNOLOGY INC0 citations51

GLOBALFOUNDRIES INC

3 patents
US10217900B2Feb 26, 2019

Light emitting diode structures

GLOBALFOUNDRIES INC1 citations61
US10355043B2Jul 16, 2019

Integrated vertical transistors and light emitting diodes

GLOBALFOUNDRIES INC0 citations51
US10056453B2Aug 21, 2018

Semiconductor wafers with reduced bow and warpage

GLOBALFOUNDRIES INC0 citations51

T RAM SEMICONDUCTOR INC

2 patents
US8017998B1Sep 13, 2011

Gettering contaminants for integrated circuits formed on a silicon-on-insulator structure

T RAM SEMICONDUCTOR INC5 citations62
US7592642B1Sep 22, 2009

Thyristor-based semiconductor device with indium-carbon implant and method of fabrication

T RAM SEMICONDUCTOR INC1 citations51

SUVOLTA INC

1 patent
US8017476B2Sep 13, 2011

Method for manufacturing a junction field effect transistor having a double gate

SUVOLTA INC2 citations60

DSM SOLUTIONS INC

1 patent
US7648898B2Jan 19, 2010

Method to fabricate gate electrodes

DSM SOLUTIONS INC3 citations60

BANNA SRINIVASA R

1 patent
US8264017B2Sep 11, 2012

Junction field effect transistor having a double gate structure

BANNA SRINIVASA R1 citations43