Inventor

KANG HEE-BOK

KR312 patents

⚠️ This page may combine multiple inventors who share the name “KANG HEE-BOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANG HEE-BOK

HYNIX SEMICONDUCTOR INC

Phase change resistor cell and nonvolatile memory device using the same

Composite memory device

Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof

Nonvolatile programmable logic circuit

One-transistor type DRAM

Nonvolatile ferroelectric memory device and refresh method thereof

Multi-protocol serial interface system

Nonvolatile ferroelectric perpendicular electrode cell, FeRAM having the cell and method for manufacturing the cell

Sense amplifier circuit in semiconductor memory device and driving method thereof

Nonvolatile programmable logic circuit

RFID device having nonvolatile ferroelectric memory device

Phase change resistor cell, nonvolatile memory device and control method using the same

Test mode control device using nonvolatile ferroelectric memory

Semiconductor memory device with on die termination circuit

Phase change resistor cell and nonvolatile memory device using the same

Serial bus controller using nonvolatile ferroelectric memory

Power-on reset circuit with current detection

Ferroelectric register, and method for manufacturing capacitor of the same

Nonvolatile ferroelectric memory device and method for storing multiple bit using the same

Nonvolatile memory device

Semiconductor memory device

Magnetic random access memory

Nonvolatile ferroelectric memory device and method for detecting weak cell using the same

Biosensor and sensing cell array using the same

Nonvolatile ferroelectric memory device and method of fabricating the same

Column repair circuit in ferroelectric memory

Magnetic random access memory using bipolar junction transistor

Ferroelectric memory and method for driving the same

Coding cell of nonvolatile ferroelectric memory device and operating method thereof, and column repair circuit of nonvolatile ferroelectric memory device having the coding cell and method for repairing column

HYUNDAI ELECTRONICS IND

Nonvolatile ferroelectric memory device and method for driving same

Nonvolatile ferroelectric memory device with column redundancy circuit and method for relieving failed address thereof

Cell block structure of nonvolatile ferroelectric memory

Nonvolatile ferroelectric memory

Nonvolatile ferroelectric memory device having global and local bitlines and split workline driver

Non-volatile ferroelectric memory

Circuit for driving nonvolatile ferroelectric memory

Nonvolatile ferroelectric memory having shunt lines

LG SEMICON CO LTD

Nonvolatile ferroelectric memory and a method of manufacturing the same

Nonvolatile ferroelectric memory without a separate cell plate line and method of manufacturing the same

Split word line ferroelectric memory

SWL ferroelectric memory and circuit for driving the same

Nonvolatile ferroelectric memory device

Ferroelectric memory device without a separate cell plate line and method of making the same

KANG HEE BOK

Nonvolatile ferroelectric memory device and method for manufacturing the same

Integrated circuit and manufacturing method thereof

Dual antenna RFID tag

Phase change memory device having write driving control signal corresponding to set/reset write time

HYNIX CORP

Nonvolatile ferroelectric memory device and driving method thereof

HYNIX DEMICONDUCTOR INC

Nonovolatile ferroelectric memory device and driving method thereof

KANG HEE-BOK

RFID tag