Inventor
TSAI MIN-HSUAN
US24 patents
⚠️ This page may combine multiple inventors who share the name “TSAI MIN-HSUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GOOGLE LLC
11 patentsUS9953222B2Apr 24, 2018
Selecting and presenting representative frames for video previews
GOOGLE LLC12 citations82
US11042754B2Jun 22, 2021
Summarizing video content
GOOGLE LLC3 citations72
US10867183B2Dec 15, 2020
Selecting and presenting representative frames for video previews
GOOGLE LLC4 citations71
US11758233B1Sep 12, 2023
Time marking chapters in media items at a platform using machine-learning
GOOGLE LLC2 citations70
US12118036B2Oct 15, 2024
Summarizing video content
GOOGLE LLC0 citations61
US12014542B2Jun 18, 2024
Selecting and presenting representative frames for video previews
GOOGLE LLC0 citations60
US12382139B2Aug 5, 2025
Time marking chapters in media items at a platform using machine-learning
GOOGLE LLC0 citations59
US10777229B2Sep 15, 2020
Generating moving thumbnails for videos
GOOGLE LLC0 citations51
US10257546B1Apr 9, 2019
Identifying transitions within media content items
GOOGLE LLC0 citations51
US9955193B1Apr 24, 2018
Identifying transitions within media content items
GOOGLE LLC1 citations51
US12468761B2Nov 11, 2025
Product identification in media items
GOOGLE LLC0 citations40
UNITED MICROELECTRONICS CORP
7 patentsUS7728388B1Jun 1, 2010
Power semiconductor device
UNITED MICROELECTRONICS CORP15 citations83
US9196723B1Nov 24, 2015
High voltage semiconductor devices with Schottky diodes
UNITED MICROELECTRONICS CORP12 citations80
US11735657B2Aug 22, 2023
Method for fabricating transistor structure
UNITED MICROELECTRONICS CORP0 citations59
US11417761B1Aug 16, 2022
Transistor structure and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations59
US10431655B2Oct 1, 2019
Transistor structure
UNITED MICROELECTRONICS CORP0 citations51
US9214549B2Dec 15, 2015
High voltage device having Schottky diode
UNITED MICROELECTRONICS CORP0 citations51
US9508813B1Nov 29, 2016
High-side field effect transistor
UNITED MICROELECTRONICS CORP0 citations35