P

Inventor

JEONG JAE-YONG

KR91 patents
⚠️ This page may combine multiple inventors who share the name “JEONG JAE-YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

36 patents
US7349263B2Mar 25, 2008

Circuit and method for adaptive incremental step-pulse programming in a flash memory device

SAMSUNG ELECTRONICS CO LTD129 citations98
US6614688B2Sep 2, 2003

Method of programming non-volatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD170 citations98
US6353555B1Mar 5, 2002

Flash memory device capable of minimizing a substrate voltage bouncing and a program method thereof

SAMSUNG ELECTRONICS CO LTD97 citations98
US6938116B2Aug 30, 2005

Flash memory management method

SAMSUNG ELECTRONICS CO LTD122 citations97
US6717861B2Apr 6, 2004

Non-volatile semiconductor memory device capable of preventing program disturb due to noise voltage induced at a string select line and program method thereof

SAMSUNG ELECTRONICS CO LTD60 citations96
US6650566B2Nov 18, 2003

Nonvolatile semiconductor memory with a programming operation and the method thereof

SAMSUNG ELECTRONICS CO LTD50 citations96
US7821837B2Oct 26, 2010

Reprogrammable nonvolatile memory devices and methods

SAMSUNG ELECTRONICS CO LTD18 citations93
US7542354B2Jun 2, 2009

Reprogrammable nonvolatile memory devices and methods

SAMSUNG ELECTRONICS CO LTD16 citations93
US7457168B2Nov 25, 2008

Non-volatile memory device and associated method of erasure

SAMSUNG ELECTRONICS CO LTD18 citations93
US7024598B2Apr 4, 2006

Nonvolatile semiconductor memory device with a fail bit detecting scheme and method for counting the number of fail bits

SAMSUNG ELECTRONICS CO LTD29 citations93
US10573386B2Feb 25, 2020

Memory device including NAND strings and method of operating the same

SAMSUNG ELECTRONICS CO LTD15 citations86
US9036412B2May 19, 2015

Memory device and method of determining read voltage of memory device

SAMSUNG ELECTRONICS CO LTD11 citations84
US8379460B2Feb 19, 2013

Trim circuit and semiconductor memory device comprising same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7800944B2Sep 21, 2010

Nonvolatile semiconductor memory device and programming method thereof

SAMSUNG ELECTRONICS CO LTD9 citations84
US7359240B2Apr 15, 2008

Flash memory device with multi level cell and burst access method therein

SAMSUNG ELECTRONICS CO LTD10 citations84
US7286413B2Oct 23, 2007

Non-volatile memory device and method of programming same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7266029B2Sep 4, 2007

Nonvolatile memory devices including overlapped data sensing and verification and methods of verifying data in nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD11 citations84
US7245537B2Jul 17, 2007

Nonvolatile memory device and method of programming same

SAMSUNG ELECTRONICS CO LTD12 citations84
US7239554B2Jul 3, 2007

Nonvolatile memory device and method of improving programming characteristic

SAMSUNG ELECTRONICS CO LTD17 citations84
US7200049B2Apr 3, 2007

Methods for accelerated erase operations in non-volatile memory devices and related devices

SAMSUNG ELECTRONICS CO LTD16 citations84
US6891754B2May 10, 2005

Nonvolatile semiconductor memory with a programming operation and the method thereof

SAMSUNG ELECTRONICS CO LTD13 citations84
US9147483B2Sep 29, 2015

Apparatus and method of operating memory device

SAMSUNG ELECTRONICS CO LTD9 citations83
US7643340B2Jan 5, 2010

Method and apparatus for programming multi level cell flash memory device

SAMSUNG ELECTRONICS CO LTD18 citations83
US7602650B2Oct 13, 2009

Flash memory device and method for programming multi-level cells in the same

SAMSUNG ELECTRONICS CO LTD13 citations83
US7599219B2Oct 6, 2009

Flash memory devices that support incremental step-pulse programming using nonuniform verify time intervals

SAMSUNG ELECTRONICS CO LTD13 citations83
US7525838B2Apr 28, 2009

Flash memory device and method for programming multi-level cells in the same

SAMSUNG ELECTRONICS CO LTD12 citations83
US7447067B2Nov 4, 2008

Method and apparatus for programming multi level cell flash memory device

SAMSUNG ELECTRONICS CO LTD17 citations83
US7123528B2Oct 17, 2006

Flash memory device having column predecoder capable of selecting all column selection transistors and stress test method thereof

SAMSUNG ELECTRONICS CO LTD7 citations74
US7099211B2Aug 29, 2006

Flash memory device capable of reducing test time and test method thereof

SAMSUNG ELECTRONICS CO LTD6 citations74
US6807098B2Oct 19, 2004

Nonvolatile semiconductor memory with a programming operation and the method thereof

SAMSUNG ELECTRONICS CO LTD6 citations74
US9817434B2Nov 14, 2017

Memory system controlling peak current generation for a plurality of memories by synchronizing internal clock of each memory with a processor clock at different times to avoid peak current generation period overlapping

SAMSUNG ELECTRONICS CO LTD2 citations73
US8854879B2Oct 7, 2014

Method of programming a nonvolatile memory device and nonvolatile memory device performing the method

SAMSUNG ELECTRONICS CO LTD6 citations73
US7474566B2Jan 6, 2009

Non-volatile memory device and method capable of re-verifying a verified memory cell

SAMSUNG ELECTRONICS CO LTD7 citations73
US11657858B2May 23, 2023

Nonvolatile memory devices including memory planes and memory systems including the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US11600539B2Mar 7, 2023

Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die

SAMSUNG ELECTRONICS CO LTD2 citations72
US11062966B2Jul 13, 2021

Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die

SAMSUNG ELECTRONICS CO LTD2 citations72

WHITESTONE CO LTD

4 patents

PARK SANG-SOO

2 patents

KIM BUM-SOO

2 patents

CHOI MYUNG-HOON

1 patent

LEE SANG HOON

1 patent

LEE JU SEOK

1 patent

SAMSUNG ELECTRONIS CO LTD

1 patent

JEONG JAE-YONG

1 patent

KIM BO-GEUN

1 patent

Showing the top 50 of 91 patents by PatentIndex Score.