Inventor

WOLSTENHOLME GRAHAM R

US43 patents

⚠️ This page may combine multiple inventors who share the name “WOLSTENHOLME GRAHAM R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WOLSTENHOLME GRAHAM R

MICRON TECHNOLOGY INC

Memory cell incorporating a chalcogenide element and method of making same

Memory cell incorporating a chalcogenide element

Memory cell incorporating a chalcogenide element and method of making same

Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell

Method of making memory cell incorporating a chalcogenide element

Three-dimensional container diode for use with multi-state material in a non-volatile memory cell

Polysilicon pillar diode for use in a non-volatile memory cell

Conductive structures, systems and devices including conductive structures and related methods

Small pores defined by a disposable internal spacer for use in chalcogenide memories

Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories

Method of making vertical diode structures

Three-dimensional container diode for use with multi-state material in a non-volatile memory cell

Three-dimensional container diode for use with multi-state material in a non-volatile memory cell

Vertical diode structures with low series resistance

Diode formation method

Method of making vertical diode structures

Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell

Vertical diode structures with low series resistance

Stair step formation using at least two masks

Methods of forming conductive structures including stair step or tiered structures having conductive portions

Stair step formation using at least two masks

Stair step formation using at least two masks

Electronic toy using prerecorded messages

Wafer with vertical diode structures

Reduction of field edge thinning in peripheral devices

Reduction of field edge thinning in peripheral devices

Vertical diode structures

Devices including stair step structures, and related apparatuses and memory devices

Memory devices including stair step or tiered structures and related methods

Devices including stair step structures, and related memory devices and electronic systems

Methods of forming memory devices including stair step structures

Microelectronic devices with symmetrically distributed staircase stadiums and related systems and methods

Semiconductor structures including vertical diode structures and methods for making the same

Vertical diode structures

Memory devices and related methods

Stair step formation using at least two masks

Semiconductor structures including vertical diode structures and methods of making the same

Reduction of field edge thinning in peripheral devices

NAT SEMICONDUCTOR CORP

Method of controlling oxide thinning in an EPROM or flash memory array

Memory array with field oxide islands eliminated and method

Method for preventing bit line-to-bit line leakage in the access transistor region of an AMG EPROM

HA CHANG WAN

Stair step formation using at least two masks

MICRON TECHOLOGY INC

Method of making vertical diode structures