Inventor
HOINKIS MARK
US23 patents
⚠️ This page may combine multiple inventors who share the name “HOINKIS MARK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
8 patentsUS6221757B1Apr 24, 2001
Method of making a microelectronic structure
INFINEON TECHNOLOGIES AG100 citations97
US7241696B2Jul 10, 2007
Method for depositing a metal layer on a semiconductor interconnect structure having a capping layer
INFINEON TECHNOLOGIES AG20 citations92
US7122462B2Oct 17, 2006
Back end interconnect with a shaped interface
INFINEON TECHNOLOGIES AG25 citations92
US7060619B2Jun 13, 2006
Reduction of the shear stress in copper via's in organic interlayer dielectric material
INFINEON TECHNOLOGIES AG39 citations92
US6870263B1Mar 22, 2005
Device interconnection
INFINEON TECHNOLOGIES AG15 citations82
US7368804B2May 6, 2008
Method and apparatus of stress relief in semiconductor structures
INFINEON TECHNOLOGIES AG2 citations60
US7001835B2Feb 21, 2006
Crystallographic modification of hard mask properties
INFINEON TECHNOLOGIES AG0 citations52
US7786007B2Aug 31, 2010
Method and apparatus of stress relief in semiconductor structures
INFINEON TECHNOLOGIES AG0 citations50
IBM
8 patentsUS7052621B2May 30, 2006
Bilayered metal hardmasks for use in Dual Damascene etch schemes
IBM15 citations92
US8871107B2Oct 28, 2014
Subtractive plasma etching of a blanket layer of metal or metal alloy
IBM13 citations84
US6539625B2Apr 1, 2003
Chromium adhesion layer for copper vias in low-k technology
IBM17 citations84
US6383929B1May 7, 2002
Copper vias in low-k technology
IBM17 citations84
US7241681B2Jul 10, 2007
Bilayered metal hardmasks for use in dual damascene etch schemes
IBM13 citations83
US6057236AMay 2, 2000
CVD/PVD method of filling structures using discontinuous CVD AL liner
IBM17 citations83
US7091612B2Aug 15, 2006
Dual damascene structure and method
IBM8 citations73
US7494915B2Feb 24, 2009
Back end interconnect with a shaped interface
IBM0 citations52
APPLIED MATERIALS INC
4 patentsUS9114438B2Aug 25, 2015
Copper residue chamber clean
APPLIED MATERIALS INC184 citations99
US9493879B2Nov 15, 2016
Selective sputtering for pattern transfer
APPLIED MATERIALS INC132 citations98
US5989633ANov 23, 1999
Process for overcoming CVD aluminum selectivity loss with warm PVD aluminum
APPLIED MATERIALS INC5 citations63
US9960052B2May 1, 2018
Methods for etching a metal layer to form an interconnection structure for semiconductor applications
APPLIED MATERIALS INC1 citations48