Inventor
LA TULIPE JR DOUGLAS C
US36 patents
⚠️ This page may combine multiple inventors who share the name “LA TULIPE JR DOUGLAS C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
20 patentsUS7666723B2Feb 23, 2010
Methods of forming wiring to transistor and related transistor
IBM271 citations98
US9064937B2Jun 23, 2015
Substrate bonding with diffusion barrier structures
IBM29 citations94
US8946007B2Feb 3, 2015
Inverted thin channel mosfet with self-aligned expanded source/drain
IBM17 citations93
US9029238B2May 12, 2015
Advanced handler wafer bonding and debonding
IBM26 citations92
US8900885B1Dec 2, 2014
Wafer bonding misalignment reduction
IBM22 citations91
US7723851B2May 25, 2010
Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep vias
IBM17 citations90
US9059039B2Jun 16, 2015
Reducing wafer bonding misalignment by varying thermal treatment prior to bonding
IBM6 citations84
US8871624B2Oct 28, 2014
Sealed air gap for semiconductor chip
IBM8 citations84
US7875528B2Jan 25, 2011
Method, system, program product for bonding two circuitry-including substrates and related stage
IBM7 citations84
US7488630B2Feb 10, 2009
Method for preparing 2-dimensional semiconductor devices for integration in a third dimension
IBM9 citations84
US9543229B2Jan 10, 2017
Combination of TSV and back side wiring in 3D integration
IBM2 citations72
US9536809B2Jan 3, 2017
Combination of TSV and back side wiring in 3D integration
IBM3 citations72
US7704869B2Apr 27, 2010
Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep vias
IBM7 citations71
US7528056B2May 5, 2009
Low-cost strained SOI substrate for high-performance CMOS technology
IBM5 citations63
US7955967B2Jun 7, 2011
Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep vias
IBM5 citations60
US9190303B2Nov 17, 2015
Reducing wafer bonding misalignment by varying thermal treatment prior to bonding
IBM0 citations52
US8963278B2Feb 24, 2015
Three-dimensional integrated circuit device using a wafer scale membrane
IBM0 citations52
US8647939B2Feb 11, 2014
Non-relaxed embedded stressors with solid source extension regions in CMOS devices
IBM0 citations52
US7494915B2Feb 24, 2009
Back end interconnect with a shaped interface
IBM0 citations52
US9171749B2Oct 27, 2015
Handler wafer removal facilitated by the addition of an amorphous carbon layer on the handler wafer
IBM0 citations42
INFINEON TECHNOLOGIES AG
3 patentsUS7241696B2Jul 10, 2007
Method for depositing a metal layer on a semiconductor interconnect structure having a capping layer
INFINEON TECHNOLOGIES AG20 citations92
US7122462B2Oct 17, 2006
Back end interconnect with a shaped interface
INFINEON TECHNOLOGIES AG25 citations92
US7001835B2Feb 21, 2006
Crystallographic modification of hard mask properties
INFINEON TECHNOLOGIES AG0 citations52
LA TULIPE JR DOUGLAS C
3 patentsUS8765578B2Jul 1, 2014
Edge protection of bonded wafers during wafer thinning
LA TULIPE JR DOUGLAS C16 citations82
US9318375B2Apr 19, 2016
Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep vias
LA TULIPE JR DOUGLAS C2 citations59
US8637953B2Jan 28, 2014
Wafer scale membrane for three-dimensional integrated circuit device fabrication
LA TULIPE JR DOUGLAS C0 citations50
GLOBALFOUNDRIES INC
2 patentsBERLINER NATHANIEL C
2 patentsUS8124427B2Feb 28, 2012
Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness
BERLINER NATHANIEL C2 citations60
US8940554B2Jan 27, 2015
Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness
BERLINER NATHANIEL C0 citations50