Inventor

YANG HAINING

US135 patents

⚠️ This page may combine multiple inventors who share the name “YANG HAINING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANG HAINING

IBM

Sub-lithographic feature patterning using self-aligned self-assembly polymers

Sub-lithographic local interconnects, and methods for forming same

Sub-lithographic nano interconnect structures, and method for forming same

Method for fabricating shallow trench isolation structures using diblock copolymer patterning

Increasing carrier mobility in NFET and PFET transistors on a common wafer

Device structures including backside contacts, and methods for forming same

Structures incorporating semiconductor device structures with reduced junction capacitance and drain induced barrier lowering

Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same

Sub-lithographic gate length transistor using self-assembling polymers

Method for forming self-aligned, dual silicon nitride liner for CMOS devices

Method of forming single bitline contact using line shape masks for vertical transistors in DRAM/e-DRAM devices

Asymmetric inside spacer for vertical transistor

Gate conductor structure

Contact aperture and contact via with stepped sidewall and methods for fabrication thereof

Structure and method for improved SRAM interconnect

PFETs and methods of manufacturing the same

Electronically programmable fuse having anode and link surrounded by low dielectric constant material

Selective stress engineering for SRAM stability improvement

Dual liner capping layer interconnect structure and method

Embedded interconnects, and methods for forming same

Fully and uniformly silicided gate structure and method for forming same

Strained MOSFETs on separated silicon layers

Gate metal recess for oxidation protection and parasitic capacitance reduction

QUALCOMM INC

Programmable circuits for performing machine learning operations on edge devices

Semiconductor device implemented with buried rails

Circuits employing a double diffusion break (DDB) and single diffusion break (SDB) in different type diffusion region(s), and related fabrication methods

Gate-all-around (GAA) and fin field-effect transistor (FinFet) hybrid static random-access memory (SRAM)

Conductive cap for metal-gate transistor

FinFET device and method of making the same

FinFET with cut gate stressor

High density area efficient thin-oxide decoupling capacitor using conductive gate resistor

Contact for semiconductor device

Circuits employing asymmetric diffusion breaks in different type semiconductor diffusion regions, and related fabrication methods

Integrated circuits (ICs) employing additional output vertical interconnect access(es) (VIA(s)) coupled to a circuit output VIA to decrease circuit output resistance

Integrated circuit (IC) employing a channel structure layout having an active semiconductor channel structure(s) and an isolated neighboring dummy semiconductor channel structure(s) for increased uniformity

MICRON TECHNOLOGY INC

Method for forming platinum-rhodium stack as an oxygen barrier

Rhodium-rich oxygen barriers

Method of forming a layer comprising tungsten oxide

Integrated circuits with rhodium-rich structures

Processes to form a metallic film stack

Rhodium-rich integrated circuit capacitor electrode

Platinum-rhodium stack as an oxygen barrier in an integrated circuit capacitor

Methods to form rhodium-rich oxygen barriers

Methods of forming a field effect transistors

Field effect transistors and methods of forming a field effect transistor

Capacitors and capacitor forming methods

INFINEON TECHNOLOGIES AG

Method for depositing a metal layer on a semiconductor interconnect structure having a capping layer

CHARTERED SEMICONDUCTOR MFG

Structure and method of applying stresses to PFET and NFET transistor channels for improved performance

ROADMAP SYSTEMS LTD

Space-division multiplexed reconfigurable, wavelength selective switch

YANG CHIH-CHAO

Structure for metal cap applications