Inventor
LEE JONG-WON
KR226 patents
⚠️ This page may combine multiple inventors who share the name “LEE JONG-WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS6626968B2Sep 30, 2003
Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD53 citations96
US9633040B2Apr 25, 2017
Distributed processing system including a name node and a plurality of data nodes, and method of operating the same
SAMSUNG ELECTRONICS CO LTD37 citations94
US6914001B2Jul 5, 2005
Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
SAMSUNG ELECTRONICS CO LTD20 citations93
US6863592B2Mar 8, 2005
Chemical/mechanical polishing slurry and chemical mechanical polishing method using the same
SAMSUNG ELECTRONICS CO LTD26 citations93
US6610596B1Aug 26, 2003
Method of forming metal interconnection using plating and semiconductor device manufactured by the method
SAMSUNG ELECTRONICS CO LTD33 citations93
US6100826AAug 8, 2000
Symbol decoding method and apparatus
SAMSUNG ELECTRONICS CO LTD82 citations93
US6540935B2Apr 1, 2003
Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
SAMSUNG ELECTRONICS CO LTD30 citations90
US10390687B2Aug 27, 2019
Endoscopic surgical instruments
SAMSUNG ELECTRONICS CO LTD8 citations84
US9997269B2Jun 12, 2018
Methods of tracing regions of interest, radiographic apparatuses, methods of controlling the radiographic apparatuses, and radiography methods
SAMSUNG ELECTRONICS CO LTD10 citations84
US9724061B2Aug 8, 2017
X-ray imaging apparatus and method of controlling the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7963760B2Jun 21, 2011
Heater cartridge and molding apparatus having the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7498217B2Mar 3, 2009
Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layers
SAMSUNG ELECTRONICS CO LTD9 citations84
US7196010B2Mar 27, 2007
Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD16 citations84
US8043970B2Oct 25, 2011
Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD15 citations83
US6976902B2Dec 20, 2005
Chemical mechanical polishing apparatus
SAMSUNG ELECTRONICS CO LTD12 citations83
US6930054B2Aug 16, 2005
Slurry composition for use in chemical mechanical polishing of metal wiring
SAMSUNG ELECTRONICS CO LTD13 citations82
MICRON TECHNOLOGY INC
5 patentsUS9590012B2Mar 7, 2017
Self-aligned cross-point phase change memory-switch array
MICRON TECHNOLOGY INC29 citations94
US9306165B2Apr 5, 2016
Replacement materials processes for forming cross point memory
MICRON TECHNOLOGY INC12 citations93
US10050084B2Aug 14, 2018
Replacement materials processes for forming cross point memory
MICRON TECHNOLOGY INC4 citations84
US9543003B2Jan 10, 2017
Memory array plane select
MICRON TECHNOLOGY INC9 citations84
US9029826B2May 12, 2015
Phase change memory including ovonic threshold switch with layered electrode and methods for forming the same
MICRON TECHNOLOGY INC13 citations84
LG DISPLAY CO LTD
5 patentsUS11301100B2Apr 12, 2022
Display device
LG DISPLAY CO LTD8 citations85
US10777620B2Sep 15, 2020
Display device
LG DISPLAY CO LTD12 citations85
US10714557B2Jul 14, 2020
Substrate for display device and display device including the same
LG DISPLAY CO LTD9 citations84
US10431599B2Oct 1, 2019
Substrate for display device and display device including the same
LG DISPLAY CO LTD6 citations84
US10340320B2Jul 2, 2019
Substrate for display device and display device including the same
LG DISPLAY CO LTD9 citations84
INTEL CORP
3 patentsUS6797979B2Sep 28, 2004
Metal structure for a phase-change memory device
INTEL CORP294 citations99
US6569705B2May 27, 2003
Metal structure for a phase-change memory device
INTEL CORP345 citations99
US8345472B2Jan 1, 2013
Three-terminal ovonic threshold switch as a current driver in a phase change memory
INTEL CORP26 citations93
HYNIX SEMICONDUCTOR INC
3 patentsFUJI XEROX CO LTD
2 patentsUS5935751AAug 10, 1999
Toner for developing electrostatic latent image, process for manufacturing the same, developer for electrostatic latent image, and image-forming method
FUJI XEROX CO LTD126 citations98
US6436599B1Aug 20, 2002
Toner, method of producing toner, and image forming method using toner
FUJI XEROX CO LTD30 citations92
ALMUS CORP
2 patentsLEE JONG WON
2 patentsLG ELECTRONICS INC
1 patentCHANG KUO-WEI
1 patentSEO WON CO LTD
1 patentKOREA TELECOMMUNICATION
1 patentLEE JONG-WON
1 patentHYUNDAI MOBIS
1 patentSEOUL NAT UNIVERSITY FOUNDATIO
1 patentSK HYNIX INC
1 patentHAN JAE HUNG
1 patentSTS SC & TELECOMM CO LTD
1 patentMITSUBISHI HEAVY IND LTD
1 patentSFA SEMICON CO LTD
1 patentShowing the top 50 of 226 patents by PatentIndex Score.